Fig. 1. Schematics of localized enhancement of single crystal Ge electrical conductivity by laser irradiation. (a) Incident laser applied inside Ge lattice; (b) electrical conductivity versus temperature

Fig. 2. Systems in laser-controlled electrolytic processing. (a) Laser processing system; (b) control system; (c) jet system; (d) processing position system

Fig. 3. Experimental processing device

Fig. 4. Diagrams of contour extraction and parameter definition. (a) Schematic of two-dimensional contour extraction from dimple; (b) diagram of dimple parameter definition

Fig. 5. Dimple morphologies under different offset distances. (a1)(a2) 5 mm; (b1)(b2) 7 mm; (c1)(c2) 9 mm; (d1)(d2) 11 mm

Fig. 6. EDS analysis results with and without particle attachment. (a) Without particle attachment; (b) with particle attachment

Fig. 7. Raman diagrams under different offset distances. (a) 7 mm; (b) 9 mm

Fig. 8. Current variation curves and machining results. (a) Measured currents under different offset distances; (b) effect of offset distance on each parameter

Fig. 9. Process of auto-coupled laser-electrochemical co-machining. (a) High temperature region; (b) region of elevated conductivity; (c) region of current change; (d) co-machining result

Fig. 10. Schematic of auto-coupled laser-electrochemical co-machining system

Fig. 11. Microgrooves by laser dry-cutting and auto-coupled laser-electrochemical co-machining. (a) Laser dry-cutting; (b) auto-coupled laser-electrochemical co-machining; (c) SEM surface morphology; (d) EDS analysis result

Fig. 12. 3D morphologies under different processing voltages. (a) 1 V; (b) 2 V; (c) 3 V; (d) 4 V