Chinese Journal of Lasers, Volume. 48, Issue 4, 0401014(2021)

A Review of Material Removal Mechanism in Ultra-Precision Polishing of Optical Glass

Xiaowei Jiang, Xingwu Long, and Zhongqi Tan*
Author Affiliations
  • College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, Hunan 410073, China
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    Figures & Tables(17)
    Tetrahedral molecular structure of fused silica[21]
    TEM maps of three commonly used abrasive particles[28]. (a) SiO2 abrasive particles; (b) Al2O3 abrasive particles;(c) CeO2 abrasive particles
    Commercial optical pitch polishing pad
    Schematics of the contact between a wafer, an abrasive particle, and different texture pads[37]. (a) Soft pad; (b) hard pad
    Schematic of the micro-contact between a pad, an abrasive particle, and a wafer[39]
    Schematic of fluid hydrodynamics in polishing[43]
    Distributions of hydrodynamic pressure and solid contact pressure[50].(a) Hydrodynamic pressure; (b) solid contact pressure
    Fluid pressure signal and its relationship with the physical position[51]
    Three fracture mechanisms for the chemical tooth model[53].Comparision of bond strength between M—O and Si—O: (a) The former is smaller than the latter; (b) the former is larger than the latter; (c) the former is smaller than the latter
    AFM images of friction scars on Si(100) surfaces after cyclic friction in various relative humidity[55]
    Relative intensity of relative chemical components in the region of original surface, wear scar, and wear debris on Si(100) surface[55]
    CMP removal model of sapphire wafer[56]
    Relationship between removal volume in moles of Si tips and those of corresponding SiO2 films[57]
    Microscopic model proposed for removal mechanism between Si and SiO2[59]
    Schematic showing the interaction at the wear interface between Si and SiO2 due to a variation of solution pH[58]
    In situ characterizations in a liquid environment[60]. (a) SEM image of AFM tip prior to the in situ study; (b) AFM image of the sapphire wafer surface after the CMP fine polishing process as the initial state for the in situ study; (c) time-dependent surface roughness values of the wafer surface with different set-point values during the in situ study; (d) evolution of wafer surface morphology during the in situ study; (e) SEM image of the AFM tip after the in situ study; (f) AFM image of a processing area after the in situ study; (g) larger AFM image from processed area in Fig.16(f); (h) section height line taken from Fig.16(g)
    IR spectra of fused silica before and after 6 h polishing by acid and alkaline SiO2 slurries[61]
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    Xiaowei Jiang, Xingwu Long, Zhongqi Tan. A Review of Material Removal Mechanism in Ultra-Precision Polishing of Optical Glass[J]. Chinese Journal of Lasers, 2021, 48(4): 0401014

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    Paper Information

    Special Issue: SPECIAL ISSUE FOR "NATIONAL UNIVERSITY OF DEFENSE TECHNOLOGY"

    Received: Aug. 19, 2020

    Accepted: Nov. 11, 2020

    Published Online: Mar. 29, 2021

    The Author Email: Tan Zhongqi (zhqitan@sina.com)

    DOI:10.3788/CJL202148.0401014

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