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Photonics Research, Volume. 6, Issue 4, 290(2018)

High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator

Yue Wang1, Bing Wang1, Wardhana A. Sasangka1, Shuyu Bao1,2, Yiping Zhang2, Hilmi Volkan Demir2, Jurgen Michel1,3, Kenneth Eng Kian Lee1, Soon Fatt Yoon1,2, Eugene A. Fitzgerald1,3, Chuan Seng Tan1,2,4, and Kwang Hong Lee1、*
Author Affiliations
  • 1Low Energy Electronic Systems (LEES), Singapore-MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #10-01 CREATE Tower, Singapore 138602, Singapore
  • 2School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
  • 3Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  • 4e-mail: tancs@ntu.edu.sg
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    [2] S. Nakamura, G. Fasol. The Blue Laser Diode(1997).

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    [4] K. H. Lee, S. Bao, L. Zhang, D. Kohen, E. Fitzgerald, C. S. Tan. Integration of GaAs, GaN, and Si-CMOS on a common 200  mm Si substrate through multilayer transfer process. Appl. Phys. Express, 9, 086501(2016).

    [5] K. H. Lee, S. Bao, E. Fitzgerald, C. S. Tan. Integration of III-V materials and Si-CMOS through double layer tranfer process. Jpn. J. Appl. Phys., 54, 030209(2015).

    [6] S.-Y. Nunoue, T. Hikosaka, H. Yoshida, J. Tajima, S. Kimura, N. Sugiyama, K. Tachibana, T. Shioda, T. Sato, E. Muramoto, M. Onomura. LED manufacturing issues concerning gallium nitride-on-silicon (GaN-on-Si) technology and wafer scale up challenges. IEEE International Electron Devices Meeting (IEDM), 13.2.1(2013).

    [7] O. Kwon, J. Boeckl, M. I. Lee, A. J. Pitera, E. A. Fitzgerald, S. A. Ringel. Growth and properties of AlGaInP resonant cavity light emitting diodes on Ge/SiGe/Si substrate. J. Appl. Phys., 97, 034504(2005).

    [8] K. Chilukuri, M. J. Mori, C. L. Dohrman, E. A. Fitzgerald. Monolithic COMS-compatible AlGaInP visible LED arrays on silicon on lattice-engineered substrates (SOLES). Semicond. Sci. Technol., 22, 29-34(2007).

    [9] K. H. Lee, S. Bao, B. Wang, C. Wang, S. F. Yoon, J. Michel, E. A. Fitzgerald, C. S. Tan. Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer. AIP Adv., 6, 025028(2016).

    [10] K. H. Lee, S. Bao, G. Y. Chong, Y. H. Tan, E. A. Fitzgerald, C. S. Tan. Defects reduction of Ge epitaxial film in germanium-on-insulator wafer by annealing in oxygen ambient. APL Mater., 3, 016102(2015).

    [11] C. L. Andre, J. J. Boeckl, D. M. Milt, A. J. Pitera, M. L. Lee, E. A. Fitzgerald, B. M. Keyes, S. A. Ringel. Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates. Appl. Phys. Lett., 84, 3447-3449(2004).

    [12] K. H. Lee, Y. H. Tan, A. Jandl, E. A. Fitzgerald, C. S. Tan. Comparative studies of the growth and characterization of germanium epitaxial film on silicon (001) with 0° and 6° offcut. J. Electron. Mater., 42, 1133-1139(2013).

    [13] K. H. Lee, A. Jandl, Y. H. Tan, E. A. Fitzgerald, C. S. Tan. Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamber. AIP Adv., 3, 092123(2013).

    [14] D. Kohen, S. Bao, K. H. Lee, K. E. K. Lee, C. S. Tan, S. F. Yoon, E. A. Fitzgerald. The role of AsH3 partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD—Application to a 200  mm GaAs virtual substrate. J. Cryst. Growth, 421, 58-65(2015).

    [15] M. T. Currie, S. B. Samavedam, T. A. Langdo, C. W. Leitz, E. A. Fitzgerald. Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing. Appl. Phys. Lett., 72, 1718-1720(1998).

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    [17] Y. J. Lee, H. C. Kuo, S. C. Wang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee. Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening. IEEE Photon. Technol. Lett., 17, 2289-2291(2005).

    [18] F. A. Kish, F. M. Steranka, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, M. G. Craford, V. M. Robbins. Very high-efficiency semiconductor wafer-bonded transparent-substrate (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes. Appl. Phys. Lett., 64, 2839-2841(1994).

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    [20] K. Chen, N. Narendran. Estimating the average junction temperature of AlGaInP LED arrays by spectral analysis. Microelectron. Reliab., 53, 701-705(2013).

    [21] E. F. Schubert. Light-Emitting Diodes(2003).

    [22] S. Bao, K. H. Lee, C. Wang, B. Wang, R. I. Made, S. F. Yoon, J. Michel, E. Fitzgerald, C. S. Tan. Germanium-on-insulator virtual substrate for InGaP epitaxy. Mater. Sci. Semicond. Process., 58, 15-21(2017).

    [23] F. Mitsuo. Reliability and Degradation of Semiconductor Lasers and LEDs(1991).

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    Yue Wang, Bing Wang, Wardhana A. Sasangka, Shuyu Bao, Yiping Zhang, Hilmi Volkan Demir, Jurgen Michel, Kenneth Eng Kian Lee, Soon Fatt Yoon, Eugene A. Fitzgerald, Chuan Seng Tan, Kwang Hong Lee, "High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator," Photonics Res. 6, 290 (2018)

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    Paper Information

    Category: Integrated Optics

    Received: Dec. 28, 2017

    Accepted: Feb. 6, 2018

    Published Online: Aug. 1, 2018

    The Author Email: Kwang Hong Lee (Kwanghong@smart.mit.edu)

    DOI:10.1364/PRJ.6.000290

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology