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Photonics Research, Volume. 6, Issue 4, 290(2018)

High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator

Yue Wang1, Bing Wang1, Wardhana A. Sasangka1, Shuyu Bao1,2, Yiping Zhang2, Hilmi Volkan Demir2, Jurgen Michel1,3, Kenneth Eng Kian Lee1, Soon Fatt Yoon1,2, Eugene A. Fitzgerald1,3, Chuan Seng Tan1,2,4, and Kwang Hong Lee1、*
Author Affiliations
  • 1Low Energy Electronic Systems (LEES), Singapore-MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #10-01 CREATE Tower, Singapore 138602, Singapore
  • 2School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
  • 3Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  • 4e-mail: tancs@ntu.edu.sg
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    Yue Wang, Bing Wang, Wardhana A. Sasangka, Shuyu Bao, Yiping Zhang, Hilmi Volkan Demir, Jurgen Michel, Kenneth Eng Kian Lee, Soon Fatt Yoon, Eugene A. Fitzgerald, Chuan Seng Tan, Kwang Hong Lee, "High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator," Photonics Res. 6, 290 (2018)

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    Paper Information

    Category: Integrated Optics

    Received: Dec. 28, 2017

    Accepted: Feb. 6, 2018

    Published Online: Aug. 1, 2018

    The Author Email: Kwang Hong Lee (Kwanghong@smart.mit.edu)

    DOI:10.1364/PRJ.6.000290

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology