[1] [1] CHEN G Y, WU J L, ZHAO L, et al.. Low-g micro inertial switch based on Archimedes spiral[J]. Opt. Precision Eng., 2009, 17(6): 1257-1261.

[2] [2] WANG H X, ZHAO J. Inertial switch with bistable permanent magnetic structure[J]. Nanotechnology and Precision Engineering, 2009, 7(2): 137-141.

[3] [3] HAI T, LIU G H, ZHOU ZH, et al.. State of the art and trends of SOI sensor[J]. Journal of Transducer Technology, 2003, 22(5): 125-128. (in Chinese)

[4] [4] SU S X P, YANG H S, AGOGINO A M. A resonant accelerometer with two-stage microleverage mechanisms fabricated by SOI-MEMS technology[J]. Sensors Journal, IEEE, 2005, 5(6): 1214-1223.

[5] [5] GUAN L P, SIN J K O, LIU H T, et al.. A fully integrated SOI RF MEMS technology for system-on-a-chip application[J]. Electron Devices, IEEE Transactions On, 2006, 53(1): 167-172.

[6] [6] LI Y P, YU J Z, CHEN SH W. Rearrangeable nonblocking SOI waveguide thermooptic 4×4 switch matrix with low insertion loss and fast response[J]. Photonics Technology, 2005, 17(8): 1041-1135.

[7] [7] WANG CH, CHEN G Y, WU J L. Design and fabrication of low-g micro inertial switch based on MEMS technology[J]. Chinese of Sensors and Actuators, 2011, 24(5): 653-657. (in Chinese)

[8] [8] HUANG X L, XIONG Y, CHEN G Y, et al.. Fabrication of micro spiral acceleration switch using UV-LIGA technology[J]. Opt. Precision Eng., 2010, 18(5): 1152-1158. (in Chinese)

[9] [9] WANG Y Y, WU G Y, HAO Y L, et al.. Study of silicon-based MEMS technology and its standard process[J]. Acta Electronica Sinica, 2002, 30 (11): 1577-1584. (in Chinese)

[10] [10] ICHIKI M, ZHANG L, YANG Z, et al.. Thin film formation on non-planar surface with use of spray coating fabrication[J]. Microsystem Technologies, 2004, 10(5): 360-363.

[11] [11] WANG CH, CHEN G Y, WU J L. Development of planar micro-spring with low stiffness in low g_n micro inertial switch[J]. Opt. Precision Eng., 2011, 19(3): 620-627. (in Chinese)

[12] [12] GUO X, YANG P F, ZHANG H Y, et al.. The drying techniques for thermally driven MEFS[J]. Chinese Journal of Sensors and Actuators, 2010, 23(6): 243-249. (in Chinese)

[13] [13] WITVROUW A, BOIS B D, MOOR P D. et al.. A Comparison between wet HF etching and vapor HF etching for sacrificial oxide removal[C]. Proc. SPIE, 2000, 4174: 130-141.

[14] [14] ZHAO M, CHEN B Q, NIU J B, et al.. Collapse and adhesion of the electron resist pattern structure[J]. Micronanoelectronic Technology, 2011, 48(1): 63-68. (in Chinese)

[15] [15] LIU B W, ZHANG ZH H, TAN ZH M, et al.. Au-Si eutectic bonding technology for MEMS device[J]. Semiconductor Technology, 2006, 31(12): 896-899. (in Chinese)

[16] [16] ZHOU J R, ZHANG H Y, QU P F, et al.. Application of ICP etch in the fabrication of micro-accelerometer sensors[J]. Micronanoelectronic Technology, 2010, 47(11): 713-717. (in Chinese)

[17] [17] JIA M J. MEMS switches technique for acceleration detection[D]. Shanghai: Graduate University of the Chinese Academy of Sciences, 2006. (in Chinese)

[18] [18] YAMAMOTO T, KATO T, MATSUI N, et al.. Capacitive accelerometer with high aspect ratio single crystallinesilicon microstructure using the SOI structure with polysilicon-based interconnect technique, MEMS2000, Miyazaki, Japan, 2000：23-27.