Chinese Optics Letters, Volume. 14, Issue 12, 123001(2016)

Effect of sample temperature on laser-induced semiconductor plasma spectroscopy

Yang Liu1,2, Yue Tong3, Suyu Li1,2, Ying Wang1,2, Anmin Chen1,2、*, and Mingxing Jin1,2、**
Author Affiliations
  • 1Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China
  • 2Jilin Provincial Key Laboratory of Applied Atomic and Molecular Spectroscopy (Jilin University), Changchun 130012, China
  • 3Aviation University of Air Force, Changchun 130021, China
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    References(33)

    [1] F. Brech, L. Cross. Appl. Spectrosc., 16, 59(1962).

    [21] C. Nouvellon, B. Sallé, P. Palianov. Appl. Surf. Sci., 138, 311(1999).

    [23] C. Ye, G. J. Cheng. J. Manuf. Sci. Eng. Trans. ASME, 132, 1033(2010).

    [32] D. Bauerl. Laser Processing and Chemistry(2000).

    CLP Journals

    [1] Zhichao Jia, Tingzhong Zhang, Huazhong Zhu, Zewen Li, Zhonghua Shen, Jian Lu, Xiaowu Ni, "Stress damage process of silicon wafer under millisecond laser irradiation," Chin. Opt. Lett. 16, 011404 (2018)

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    Yang Liu, Yue Tong, Suyu Li, Ying Wang, Anmin Chen, Mingxing Jin, "Effect of sample temperature on laser-induced semiconductor plasma spectroscopy," Chin. Opt. Lett. 14, 123001 (2016)

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    Paper Information

    Category: Spectroscopy

    Received: Aug. 27, 2016

    Accepted: Oct. 28, 2016

    Published Online: Aug. 2, 2018

    The Author Email: Anmin Chen (amchen@jlu.edu.cn), Mingxing Jin (mxjin@jlu.edu.cn)

    DOI:10.3788/COL201614.123001

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