Fig. 1. Schematic of the experimental setup. FL is a lens.

Fig. 2. LIBS at 422.66 and 589.33 nm lines of the Ge wafer for sample temperatures of 25°C, 150°C, and 300°C, and laser pulse energies of 7.3 and 16 mJ.

Fig. 3. Temperature dependence of the emission intensity of Ge at (a) 422.66 and (b) 589.33 nm with laser energies of 3.2, 7.3, 11.7, and 16.0 mJ.

Fig. 4. LIBS at the 390.55 and 634.71 nm Si lines; the sample temperatures are 25°C, 150°C, and 300°C, and the laser pulse energies are 8.5 and 20.3 mJ.

Fig. 5. Effect of the sample temperature on the emission intensity of the (a) 390.55 and (b) 634.71 nm lines of Si; the laser energies are 3.2, 8.5, and 20.3 mJ. Error bars correspond to the standard deviation of fifteen measurements of averaged values.