A multi-parameter measurement system was developed to simultaneously measure film thickness， thickness distribution， residual stress， and other parameters that characterize the effects of film preparation in order to minimize measurement errors. A thin-film multi-parameter measurement system was designed and constructed by analyzing ellipsometry measurement， spectral measurement and laser measurement techniques. To verify the system， RC2 and the design system were used to compare SiO2 thin films with Ta2O5 thin films of different thicknesses. The results showed that the measurement deviation of the design system for different thin films was less than 0.3 nm， and the measurement deviation of thickness distribution was less than 0.06%. The thick films with different diameters were prepared and compared with the ZYGO laser interferometer， and the measurement deviation of the system was less than ±1°. These results showed that the measurement system could meet the requirements of simultaneous measurement of different requirements after film preparation， and simplify the measurement process.