Researching | Band alignment of SnO/β-Ga2O3 heterojunction and its electrical properties for power device application

Journal of Semiconductors, Volume. 46, Issue 8, 082503(2025)

Band alignment of SnO/β-Ga₂O₃ heterojunction and its electrical properties for power device application

Xia Wu¹, Chenyang Huang¹, Xiuxing Xu¹, Jun Wang¹, Xinwang Yao¹, Yanfang Liu², Xiujuan Wang¹, Chunyan Wu^1、*, and Linbao Luo¹

Author Affiliations

¹Institute of Microelectronics, Hefei University of Technology, Hefei 230009, China

²Institute of Instrumental Analysis Center, Hefei University of Technology, Hefei 230009, China

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Xia Wu, Chenyang Huang, Xiuxing Xu, Jun Wang, Xinwang Yao, Yanfang Liu, Xiujuan Wang, Chunyan Wu, Linbao Luo. Band alignment of SnO/β-Ga₂O₃ heterojunction and its electrical properties for power device application[J]. Journal of Semiconductors, 2025, 46(8): 082503

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Paper Information

Category: Research Articles

Received: Feb. 13, 2025

Accepted: --

Published Online: Aug. 27, 2025

The Author Email: Chunyan Wu (CYWu)

DOI:10.1088/1674-4926/25020008

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Instrumentation, Measurement and Metrology