Journal of Semiconductors, Volume. 46, Issue 8, 082503(2025)
Band alignment of SnO/β-Ga2O3 heterojunction and its electrical properties for power device application
Fig. 1. (Color online) (a) Cross-sectional schematic and (b) top-view optical microphotograph of vertical SnO/β-Ga2O3 HJD. (c) Sn 3d core level spectrum and (d) O 1s core level spectra of the SnO film.
Fig. 2. (Color online) (a) Ga 3d core level spectrum and VBM of β-Ga2O3 substrate. (b) Sn 3d3/2 core level spectrum and VBM of SnO film. (c) Core level spectra of Sn 3d3/2 and Ga 3d at the SnO/β-Ga2O3 heterojunction interface. (d) Energy band diagram of the SnO/β-Ga2O3 heterojunction under thermal equilibrium conditions.
Fig. 3. (Color online) (a) The forward I−V curves and corresponding Ron,sp of SnO/β-Ga2O3 HJD and β-Ga2O3 SBD. (b) Semi-logarithmic scale of the I−V behavior, the inset provides the calculated ideality factor for further analysis. (c) C−V and 1/C2−V curves of SnO/β-Ga2O3 HJD measured at 10 kHz. (d) Reverse I−V curves of SnO/β-Ga2O3 HJD as well as β-Ga2O3 SBD.
Fig. 4. (Color online) Two-dimensional distributions of the electric field under a reverse voltage of 500 V for (a) β-Ga2O3 SBD and (b) SnO/β-Ga2O3 HJD, respectively. Extracted electric field profiles along (c) the AA' direction and (d) the BB' direction.
Fig. 5. (Color online) Benchmarking of the cutting-edge β-Ga2O3 HJDs.
Fig. 6. (Color online) (a) The forward I−V curves and corresponding Ron,sp and (b) reverse I−V curves of SnO/β-Ga2O3 HJD with diameters of 50 and 100 µm.
Get Citation
Copy Citation Text
Xia Wu, Chenyang Huang, Xiuxing Xu, Jun Wang, Xinwang Yao, Yanfang Liu, Xiujuan Wang, Chunyan Wu, Linbao Luo. Band alignment of SnO/β-Ga2O3 heterojunction and its electrical properties for power device application[J]. Journal of Semiconductors, 2025, 46(8): 082503
Category: Research Articles
Received: Feb. 13, 2025
Accepted: --
Published Online: Aug. 27, 2025
The Author Email: Chunyan Wu (CYWu)