Journal of Semiconductors, Volume. 46, Issue 8, 082503(2025)

Band alignment of SnO/β-Ga2O3 heterojunction and its electrical properties for power device application

Xia Wu1, Chenyang Huang1, Xiuxing Xu1, Jun Wang1, Xinwang Yao1, Yanfang Liu2, Xiujuan Wang1, Chunyan Wu1、*, and Linbao Luo1
Author Affiliations
  • 1Institute of Microelectronics, Hefei University of Technology, Hefei 230009, China
  • 2Institute of Instrumental Analysis Center, Hefei University of Technology, Hefei 230009, China
  • show less
    Figures & Tables(6)
    (Color online) (a) Cross-sectional schematic and (b) top-view optical microphotograph of vertical SnO/β-Ga2O3 HJD. (c) Sn 3d core level spectrum and (d) O 1s core level spectra of the SnO film.
    (Color online) (a) Ga 3d core level spectrum and VBM of β-Ga2O3 substrate. (b) Sn 3d3/2 core level spectrum and VBM of SnO film. (c) Core level spectra of Sn 3d3/2 and Ga 3d at the SnO/β-Ga2O3 heterojunction interface. (d) Energy band diagram of the SnO/β-Ga2O3 heterojunction under thermal equilibrium conditions.
    (Color online) (a) The forward I−V curves and corresponding Ron,sp of SnO/β-Ga2O3 HJD and β-Ga2O3 SBD. (b) Semi-logarithmic scale of the I−V behavior, the inset provides the calculated ideality factor for further analysis. (c) C−V and 1/C2−V curves of SnO/β-Ga2O3 HJD measured at 10 kHz. (d) Reverse I−V curves of SnO/β-Ga2O3 HJD as well as β-Ga2O3 SBD.
    (Color online) Two-dimensional distributions of the electric field under a reverse voltage of 500 V for (a) β-Ga2O3 SBD and (b) SnO/β-Ga2O3 HJD, respectively. Extracted electric field profiles along (c) the AA' direction and (d) the BB' direction.
    (Color online) Benchmarking of the cutting-edge β-Ga2O3 HJDs.
    (Color online) (a) The forward I−V curves and corresponding Ron,sp and (b) reverse I−V curves of SnO/β-Ga2O3 HJD with diameters of 50 and 100 µm.
    Tools

    Get Citation

    Copy Citation Text

    Xia Wu, Chenyang Huang, Xiuxing Xu, Jun Wang, Xinwang Yao, Yanfang Liu, Xiujuan Wang, Chunyan Wu, Linbao Luo. Band alignment of SnO/β-Ga2O3 heterojunction and its electrical properties for power device application[J]. Journal of Semiconductors, 2025, 46(8): 082503

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Research Articles

    Received: Feb. 13, 2025

    Accepted: --

    Published Online: Aug. 27, 2025

    The Author Email: Chunyan Wu (CYWu)

    DOI:10.1088/1674-4926/25020008

    Topics