Acta Photonica Sinica, Volume. 53, Issue 7, 0753303(2024)

Progress on Ultraviolet Photodetection Based on Narrow Bandgap Semiconductors (Invited)

Chunyan WU*, Yuliang ZHANG, Xinhui HE, Xiaoping YANG, and Xiujuan WANG**
Author Affiliations
  • School of Microelectronics, Hefei University of Technology, Hefei 230009, China
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    Figures & Tables(7)
    UV spectral region and its subdivisions
    Schematics of ultraviolet photodetectors based on narrow bandgap semiconductor nanostructures
    Absorption and ultraviolet photodetection application of horizontal Si nanowires[31-32]
    Absorption and ultraviolet photodetection application of vertical Si nanowires array[35,37]
    UV photodetectors based on ultrathin film of narrow bandgap inorganic semiconductors[40-42]
    UV photodetectors based on ultrathin nanosheet of narrow bandgap perovskite materials[47-48]
    UV photodetectors based on 2D layered semiconductors with narrow bandgap[52,54,56]
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    Chunyan WU, Yuliang ZHANG, Xinhui HE, Xiaoping YANG, Xiujuan WANG. Progress on Ultraviolet Photodetection Based on Narrow Bandgap Semiconductors (Invited)[J]. Acta Photonica Sinica, 2024, 53(7): 0753303

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    Paper Information

    Category: Special Issue for Attosecond Optics

    Received: Jan. 18, 2024

    Accepted: Mar. 5, 2024

    Published Online: Aug. 12, 2024

    The Author Email: Chunyan WU (cywu@hfut.edu.cn), Xiujuan WANG (xjwang2022@hfut.edu.cn)

    DOI:10.3788/gzxb20245307.0753303

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