Chinese Journal of Liquid Crystals and Displays, Volume. 36, Issue 2, 258(2021)

Remain of photoresist in halftone process based on TFT-LCD technology

JIANG Lei, HUANG Xue-yong, LIU Liang-jun, LI Guang-sheng, WANG Jian, LI Xiang-feng, MU Shao-shuai, and SHAO Bo
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    References(3)

    [3] [3] FORTUNATO E, BARQUINHA P, MARTINS R. Oxide semiconductor thin-film transistors: a review of recent advances [J]. Advanced Materials, 2012, 24(22): 2945-2986.

    [4] [4] LEE J S, CHANG S, KOO S M, et al. High-performance a-IGZO TFT with ZrO2 gate dielectric fabricated at room temperature [J]. IEEE Electron Device Letters, 2010, 31(3): 225-227.

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    JIANG Lei, HUANG Xue-yong, LIU Liang-jun, LI Guang-sheng, WANG Jian, LI Xiang-feng, MU Shao-shuai, SHAO Bo. Remain of photoresist in halftone process based on TFT-LCD technology[J]. Chinese Journal of Liquid Crystals and Displays, 2021, 36(2): 258

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    Paper Information

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    Received: Jun. 11, 2020

    Accepted: --

    Published Online: Mar. 30, 2021

    The Author Email:

    DOI:10.37188/cjlcd.2020-0151

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