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Acta Optica Sinica, Volume. 42, Issue 8, 0831001(2022)

Effect of Oxygen Annealing Temperature on Properties of Ga2O3 Thin Films Grown at Room Temperature by Pulsed Laser Deposition

Chen Wang1, Yuchao Zhang1, Weihang Fan1, Shiwei Li1, Xiaoying Zhang1, Haijun Lin1, Shuiyang Lien1,2、*, and Wenzhang Zhu1
Author Affiliations
  • 1Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices, School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen, Fujian 361024, China
  • 2Department of Materials Science and Engineering, Da-Yeh University, Changhua,Taiwan 51591, China
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    Figures&Tables (6)
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    Figures & Tables(6)
    XRD images of Ga2O3 thin films. (a) XRD image for different annealing temperatures; (b) variations of FWHM and grain size with annealing temperature for (-402) diffraction peak

    Fig. 1. XRD images of Ga2O3 thin films. (a) XRD image for different annealing temperatures; (b) variations of FWHM and grain size with annealing temperature for (-402) diffraction peak

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    Transmittance spectra of Ga2O3 thin films and optical band gap as a function of annealing temperature. (a) Transmittance spectra for different annealing temperatures; (b) optical band gap as a function of annealing temperature

    Fig. 2. Transmittance spectra of Ga2O3 thin films and optical band gap as a function of annealing temperature. (a) Transmittance spectra for different annealing temperatures; (b) optical band gap as a function of annealing temperature

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    XPS spectra of Ga2O3 thin films annealed at different temperature. (a) Full spectrum diagram; (b) atomic number fractions of Ga, O, Al, and C; (c) atomic number fraction ratio of O and Ga

    Fig. 3. XPS spectra of Ga2O3 thin films annealed at different temperature. (a) Full spectrum diagram; (b) atomic number fractions of Ga, O, Al, and C; (c) atomic number fraction ratio of O and Ga

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    XPS spectra of gallium oxide thin films obtained at different temperatures. (a) Ga 3d; (b) O 1s; (c) peak area ratio of different Ga oxidation states; (d) peak area ratio of lattice oxygen

    Fig. 4. XPS spectra of gallium oxide thin films obtained at different temperatures. (a) Ga 3d; (b) O 1s; (c) peak area ratio of different Ga oxidation states; (d) peak area ratio of lattice oxygen

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    FESEM images of Ga2O3 thin films before and after annealing. (a) Without annealing; (b) 400 ℃; (c) 500 ℃; (d) 600 ℃; (e) 700 ℃; (f) 800 ℃; (g) 900 ℃; (h) 1000 ℃

    Fig. 5. FESEM images of Ga2O3 thin films before and after annealing. (a) Without annealing; (b) 400 ℃; (c) 500 ℃; (d) 600 ℃; (e) 700 ℃; (f) 800 ℃; (g) 900 ℃; (h) 1000 ℃

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    • Table 1. Parameters of gallium oxide films deposited by pulsed laser

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      Table 1. Parameters of gallium oxide films deposited by pulsed laser

      ParameterValue
      Back pressure /(10-6 Pa)5
      Oxygen pressure /Pa0.1
      Target rotation speed /(r·min-1)1
      Substrate rotation speed /(r·min-1)5
      Substrate temperatureRT
      Laser energy density /(J·cm-2)2
      Distance from target to substrate /cm4
      Thickness of as-deposited thin films /nm85±3
      Annealing temperature /℃400--1000
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    Chen Wang, Yuchao Zhang, Weihang Fan, Shiwei Li, Xiaoying Zhang, Haijun Lin, Shuiyang Lien, Wenzhang Zhu. Effect of Oxygen Annealing Temperature on Properties of Ga2O3 Thin Films Grown at Room Temperature by Pulsed Laser Deposition[J]. Acta Optica Sinica, 2022, 42(8): 0831001

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    Paper Information

    Category: Thin Films

    Received: Sep. 27, 2021

    Accepted: Nov. 2, 2021

    Published Online: Mar. 30, 2022

    The Author Email: Shuiyang Lien (sylien@xmut.edu.cn)

    DOI:10.3788/AOS202242.0831001

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology