Effect of Oxygen Annealing Temperature on Properties of Ga<sub>2</sub>O<sub>3</sub> Thin Films Grown at Room Temperature by Pulsed Laser Deposition

Chen Wang; Yuchao Zhang; Weihang Fan; Shiwei Li; Xiaoying Zhang; Haijun Lin; Shuiyang Lien; Wenzhang Zhu

doi:10.3788/AOS202242.0831001

Acta Optica Sinica, Volume. 42, Issue 8, 0831001(2022)

Effect of Oxygen Annealing Temperature on Properties of Ga₂O₃ Thin Films Grown at Room Temperature by Pulsed Laser Deposition

Chen Wang¹, Yuchao Zhang¹, Weihang Fan¹, Shiwei Li¹, Xiaoying Zhang¹, Haijun Lin¹, Shuiyang Lien^1,2、*, and Wenzhang Zhu¹

Author Affiliations

¹Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices, School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen, Fujian 361024, China

²Department of Materials Science and Engineering, Da-Yeh University, Changhua,Taiwan 51591, China

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Chen Wang, Yuchao Zhang, Weihang Fan, Shiwei Li, Xiaoying Zhang, Haijun Lin, Shuiyang Lien, Wenzhang Zhu. Effect of Oxygen Annealing Temperature on Properties of Ga₂O₃ Thin Films Grown at Room Temperature by Pulsed Laser Deposition[J]. Acta Optica Sinica, 2022, 42(8): 0831001

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Paper Information

Category: Thin Films

Received: Sep. 27, 2021

Accepted: Nov. 2, 2021

Published Online: Mar. 30, 2022

The Author Email: Lien Shuiyang (sylien@xmut.edu.cn)

DOI:10.3788/AOS202242.0831001

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology