Journal of Infrared and Millimeter Waves, Volume. 42, Issue 2, 169(2023)
Research progress of ultra-broadband photodetectors
Figures & Tables(10)
Fig. 1. Principle schematic diagrams of（a）BE PD，（b）PTE PD，（c）PCE PD，（d）PVE PD and（e）PGE PD
Fig. 2. （a）The left figures show the schematic diagram of suspended rGO photodetector and the optical images of samples after heat treatments under different temperature，the right figure shows the response characteristics of the suspended rGO photodetector at different annealing temperatures，（b）the left figures are the structure diagrams of a millimeter-lever CNT film photodetector and a micron-level CNT film photodetector，the right figures are the response curves of millimeter device and micron device in air and vacuum respectively
Fig. 3. （a）PTE UB-PD based on self-supported rGO films，and its I-V curve and results of scanning photovoltage，（b）PTE UB-PD based on reduced graphene oxide/CsPbBr3，and its multi-wavelength photocurrent curve and spectral response，（c）suspended Pd-rGO-Ti photodetector and multi-wavelength responsivities under different annealing temperature for devices with different channel widths
Fig. 4. （a）PTE PD based on reduced SrTiO3（R-STO）and its I-V curve，（b）PDs based on CH3NH3PbI3 （MAPbI3）and poly（3，4-ethylenedioxythiophene）：poly（4 styrene sulfonate）（PEDOT：PSS）composites and their I-V curves，（c）NBS3-based PTE PD and its I-V curves，（d）PTE PD based on lead-free Cs3Cu2I5 nanolayer film and its I-V curves
Fig. 5. （a）The PCE photodetector based on EuSbTe3 and its response current curve，（b）the schematic diagram based on EuBiTe3 photodetector and its response current curve，（c）the schematic diagram of SnSe/PET photodetector structure and its response current，（d）one-dimensional CDSXSe1-X micro-nano-structure photodetector based on multi-component alloy and its response current curve
Fig. 6. （a）Heterojunction PD by integrating CQD，rGO and AgNP materials with p-Si，and I/V curve comparison，（b）UB-PD with vertical heterostructure based on TI Bi2TE3-Si，and its response current in different wave bands，（c）Bi2Te3/ pentacene heterojunction PD，and its response current in different wave bands
Fig. 7. （a）UB-PD based on vertically arranged PtSe2-GaAs heterojunction，and its spectral response，（b）heterojunction PD of multilayer PtSe2 and CS-doped FAPbI3，and its spectral response，（c）PD based on Ws2/GaAs II van der Waals heterojunction，and its spectral response，（d）heterojunction PD constructed by coating an ultra-thin molybdenum oxide（MoO3-X）hole-selective layer on the N-type Si layered structure，and its spectral response，（e）PD based on Schottky junction of AgNW/Si，and its spectral response，（f）UB-PD based on MAPbI3 and organic BHJ solution treatment，and its spectral response
Fig. 8. （a）The structure diagrams of hybrid phototransistor based on B-doped Si QD and graphene，and device photoresponse performance，（b）the diagram of phototransistor based on a vertical perovskite/organic semiconductor heterojunction，and device photoresponse performance，（c）the diagram of three-dimensional tubular GFET photodetector，and its spectral response，（d）the diagrams of HgTe QDS/graphene phototransistors，and its spectral response
Fig. 9. （a）Pyroelectric PD based on PMN-28Pt single crystal，and device photoresponse performance，（b）thermal phase transition PD based on 1T-TAS2，and device photoresponse performance，（c）quasi-suspended PD with mixed P（VDF TrFE）and MoS2，and device photoresponse performance，（c）UV-THZ double-mechanism photodetector based on CH3NH3PbI3 film，and device photoresponse performance
Table 1. Summary of UB-PD with excellent performance in recent ten years
View tableView in ArticleTable 1. Summary of UB-PD with excellent performance in recent ten years
器件类型 材料 响应度［A W-1（V W-1）］ 比探测率［cm Hz1/2W-1］ 响应时间 响应范围 BE CNT［ 20 ］0.58 N/A 150 μs 375 nm~118.8 μm PTE 3D GF［ 35 ］103 N/A 43 ms 300 nm~1.36 mm Pd/CNT/Ti［ 37 ］（157.9） 5 × 108 7 ms 375 nm~118.8 μm NbS3［ 43 ］（1） 17.6 × 105 7 ms 375 nm~118.8 μm PCE NaYF4：Yb，Er QDs/α-CsPbI3 QDs［ 46 ］1.5 N/A 5 ms 260 nm~1100 nm CdSxSe1-x［ 54 ］5.8×104 2 × 1015 13 ms 200 nm~800 nm PVE p-Si/CQD，rGO，AgNP［ 64 ］1 2 × 1012 N/A 360 nm~980 nm TI Bi2Te3-Si［ 65 ］1 2.5 × 1011 100 ms 370.6 nm~118 μm PtSe2/Si［ 68 ］12.65 2.5 × 1013 19.5 μs 200 nm~1 550 nm （MoO3-x）/S［ 71 ］N/A 6.29 × 1012 1 μs 300 nm~1 100 nm MAPbI3/BHJ［ 75 ］0.43 2.3 × 1011 5.6 ns 300 nm~1 000 nm PGE CH3NH3PbI3-xClx/
PEDOT：PSS［
80 ］109 1014 N/A 350 nm~1 100 nm 热相变 1T-TaS2［ 23 ］1 N/A 1.5 ns 532 nm~118.8 μm PCE+BE CH3NH3PbI3［ 27 ］100 32 × 109 76 ns 400 nm~118 μm
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Yu LIU, Zhi-Cheng LIN, Peng-Fei WANG, Feng HUANG, Jia-Lin SUN. Research progress of ultra-broadband photodetectors[J]. Journal of Infrared and Millimeter Waves, 2023, 42(2): 169
Paper Information
Category: Research Articles
Received: Oct. 26, 2022
Accepted: --
Published Online: Jul. 19, 2023
The Author Email: Feng HUANG (huangf@fzu.edu.cn)
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