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Photonics Research, Volume. 10, Issue 10, 2394(2022)

Si-substrate vertical-structure InGaN/GaN micro-LED-based photodetector for beyond 10 Gbps visible light communication Spotlight on Optics

Jianyang Shi1,2,3, Zengyi Xu1, Wenqing Niu1, Dong Li1, Xiaoming Wu4, Ziwei Li1,2,3,5, Junwen Zhang1,2,3,5, Chao Shen1,2,3,5,6、*, Guangxu Wang4, Xiaolan Wang4, Jianli Zhang4,7、*, Fengyi Jiang4, Shaohua Yu5, and Nan Chi1,2,3,8、*
Author Affiliations
  • 1Key Laboratory for Information Science of Electromagnetic Waves (MoE), Fudan University, Shanghai 200433, China
  • 2Shanghai Engineering Research Center of Low-Earth-Orbit Satellite Communication and Applications, Shanghai 200433, China
  • 3Shanghai Collaborative Innovation Center of Low-Earth-Orbit Satellite Communication Technology, Shanghai 200433, China
  • 4National Institute of LED on Silicon Substrate, Nanchang University, Nanchang 330096, China
  • 5Peng Cheng Laboratory, Shenzhen 518055, China
  • 6e-mail: chaoshen@fudan.edu.cn
  • 7e-mail: zhangjianli@ncu.edu.cn
  • 8e-mail: nanchi@fudan.edu.cn
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    Jianyang Shi, Zengyi Xu, Wenqing Niu, Dong Li, Xiaoming Wu, Ziwei Li, Junwen Zhang, Chao Shen, Guangxu Wang, Xiaolan Wang, Jianli Zhang, Fengyi Jiang, Shaohua Yu, Nan Chi, "Si-substrate vertical-structure InGaN/GaN micro-LED-based photodetector for beyond 10 Gbps visible light communication," Photonics Res. 10, 2394 (2022)

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    Paper Information

    Category: Fiber Optics and Optical Communications

    Received: May. 30, 2022

    Accepted: Aug. 9, 2022

    Published Online: Sep. 30, 2022

    The Author Email: Chao Shen (chaoshen@fudan.edu.cn), Jianli Zhang (zhangjianli@ncu.edu.cn), Nan Chi (nanchi@fudan.edu.cn)

    DOI:10.1364/PRJ.465455

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology