Photonics Research, Volume. 10, Issue 10, 2394(2022)
Si-substrate vertical-structure InGaN/GaN micro-LED-based photodetector for beyond 10 Gbps visible light communication Spotlight on Optics
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Fig. 1. Benchmark of distance-rate product versus reverse bias voltage for micro-LED-based photodetectors.
Fig. 2. (a) Schematic of the vertical structure of Si-substrate micro-LED-based photodetector; SEM images of (b) 10 μm, (c) 50 μm, and (d) 100 μm chips.
Fig. 3. (a) Schematic of layout for
Fig. 4. Responsivity spectra of (a) 10 μm, (b) 50 μm, and (c) 100 μm micro-LED-based photodetectors; electroluminescence spectra of (d) 10 μm, (e) 50 μm, and (f) 100 μm micro-LEDs.
Fig. 5. Current–voltage (
Fig. 6. Experimental setup of VLC system utilizing micro-LED-based photodetector.
Fig. 7. Measured forward transmission gains of (a) 10 μm, (b) 50 μm, and (c) 100 μm micro-LED-based photodetectors; (d) 10 and 20 dB bandwidths versus reverse bias.
Fig. 8. SNR versus reverse bias for (a) 10 μm, (b) 50 μm, and (c) 100 μm micro-LED-based photodetectors.
Fig. 9. Data rate versus bias current and signal Vpp for (a) 10 μm, (b) 50 μm, and (c) 100 μm micro-LED-based photodetectors.
Fig. 10. (a) Data rate versus reverse bias; (b) data rate versus incident light power for 10, 50, and 100 μm micro-LED-based photodetectors.
Fig. 11. Measured electrical spectra for (a) 10 μm, (b) 50 μm, and (c) 100 μm micro-LED-based photodetectors; maximum data rate and BER versus baudrate at 0.5 m for (d) 10 μm, (e) 50 μm, and (f) 100 μm micro-LED-based photodetectors.
Fig. 12. Data rate and BER versus transmission distance for 50 μm micro-LED-based photodetector.
Fig. 13. SNR and bit number versus frequency at 1.9 Gbaud for (a) 0.5 m and (b) 1 m transmission distance; power ratio versus frequency for (c) 0.5 m and (d) 1 m.
Table 1. Capacitance versus Voltage of Micro-LED-Based Photodetectors
View tableView in ArticleTable 1. Capacitance versus Voltage of Micro-LED-Based Photodetectors
Capacitance Bias 10 μm 50 μm 100 μm 0 V 43.8 pF 92.6 pF 196.6 pF 42.5 pF 68.7 pF 137.4 pF 42.2 pF 61.0 pF 111.5 pF 42.1 pF 59.8 pF 108.0 pF
Table 2. Recent Achievements of Micro-LED-Based Photodetectors
View tableView in ArticleTable 2. Recent Achievements of Micro-LED-Based Photodetectors
Year Substrate Array Bias Peak Response Wavelength FWHM Modulation Format Data Rate (Gbps) Distance Reference 2018 Sapphire – −3 V 392 nm 34 nm OFDM 3.2 0.5 m fiber and 0.1 m free space [ 17 ]2019 Sapphire Not mentioned −5 V 405 nm – OOK 0.35 1 m free space [ 26 ]2019 GaN – −10 V 400 nm 40 nm OOK 1.55 1 m free space [ 27 ]2020 GaN – −8 V 400 nm 60 nm BPL-OFDM 7.4 1 m free space [ 28 ]2021 Sapphire Not mentioned −5 V – – OOK 0.06 2.3 m underwater [ 29 ]2021 Sapphire −5 V – – OOK 0.3 1.25 m free space [ 30 ]2021 Sapphire −5 V – – OOK 0.54 1.1 m free space [ 31 ]2022 Si −20 V 425 nm – BPL-OFDM 8.205 0.5 m free space [ 36 ]2022 Si −20 V 400 nm 72 nm BPL-DMT 10.14 1 m free space This work
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Jianyang Shi, Zengyi Xu, Wenqing Niu, Dong Li, Xiaoming Wu, Ziwei Li, Junwen Zhang, Chao Shen, Guangxu Wang, Xiaolan Wang, Jianli Zhang, Fengyi Jiang, Shaohua Yu, Nan Chi, "Si-substrate vertical-structure InGaN/GaN micro-LED-based photodetector for beyond 10 Gbps visible light communication," Photonics Res. 10, 2394 (2022)
Paper Information
Category: Fiber Optics and Optical Communications
Received: May. 30, 2022
Accepted: Aug. 9, 2022
Published Online: Sep. 30, 2022
The Author Email: Chao Shen (chaoshen@fudan.edu.cn), Jianli Zhang (zhangjianli@ncu.edu.cn), Nan Chi (nanchi@fudan.edu.cn)
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