Mid-wavelength nBn photodetector with high operating temperature and low dark current based on InAs/InAsSb superlattice absorber

Peng Cao; Tiancai Wang; Hongling Peng; Zhanguo Li; Qiandong Zhuang; Wanhua Zheng

doi:10.3788/COL202422.012502

Chinese Optics Letters, Volume. 22, Issue 1, 012502(2024)

Mid-wavelength nBn photodetector with high operating temperature and low dark current based on InAs/InAsSb superlattice absorber

Peng Cao^1,2, Tiancai Wang^1,3, Hongling Peng^1,4, Zhanguo Li⁵, Qiandong Zhuang⁶, and Wanhua Zheng^1,2,3,4、*

Author Affiliations

¹Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³College of Electronic and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

⁴State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

⁵School of Physics, Changchun Normal University, Changchun 130022, China

⁶Physics Department, Lancaster University, Lancaster LA1 4YB, UK

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References(26)

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Peng Cao, Tiancai Wang, Hongling Peng, Zhanguo Li, Qiandong Zhuang, Wanhua Zheng, "Mid-wavelength nBn photodetector with high operating temperature and low dark current based on InAs/InAsSb superlattice absorber," Chin. Opt. Lett. 22, 012502 (2024)

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Paper Information

Category: Optoelectronics

Received: Aug. 4, 2023

Accepted: Sep. 13, 2023

Published Online: Jan. 19, 2024

The Author Email: Wanhua Zheng (whzheng@semi.ac.cn)

DOI:10.3788/COL202422.012502

CSTR:32184.14.COL202422.012502

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology