Chinese Optics Letters, Volume. 22, Issue 1, 012502(2024)

Mid-wavelength nBn photodetector with high operating temperature and low dark current based on InAs/InAsSb superlattice absorber

Peng Cao1...2, Tiancai Wang1,3, Hongling Peng1,4, Zhanguo Li5, Qiandong Zhuang6, and Wanhua Zheng1,2,34,* |Show fewer author(s)
Author Affiliations
  • 1Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3College of Electronic and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 4State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 5School of Physics, Changchun Normal University, Changchun 130022, China
  • 6Physics Department, Lancaster University, Lancaster LA1 4YB, UK
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    Peng Cao, Tiancai Wang, Hongling Peng, Zhanguo Li, Qiandong Zhuang, Wanhua Zheng, "Mid-wavelength nBn photodetector with high operating temperature and low dark current based on InAs/InAsSb superlattice absorber," Chin. Opt. Lett. 22, 012502 (2024)

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    Paper Information

    Category: Optoelectronics

    Received: Aug. 4, 2023

    Accepted: Sep. 13, 2023

    Published Online: Jan. 19, 2024

    The Author Email: Wanhua Zheng (whzheng@semi.ac.cn)

    DOI:10.3788/COL202422.012502

    CSTR:32184.14.COL202422.012502

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