Acta Optica Sinica, Volume. 44, Issue 7, 0731001(2024)

Preparation of Deep Ultraviolet High-Steepness Filter Film

Yuanhao Cai1,2, Xiuhua Fu1,2、*, Zhaowen Lin2,3, Ben Wang2,3, Zhuobin Huang3, Yonggang Pan2,3, Suotao Dong2,3, and Guangyuan Fu1,2
Author Affiliations
  • 1School of Optoelectronic Engineering, Changchun University of Science and Technology, Changchun 130022, Jilin , China
  • 2Zhongshan Institute of Changchun University of Science and Technology, Zhongshan 528437, Guangdong , China
  • 3Zhongshan Gilion Optoelectronics Technology Co., Ltd., Zhongshan 528437, Guangdong , China
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    Figures & Tables(20)
    Optical constants of ultraviolet thin film materials. (a) Refractive index n; (b) extinction coefficient k
    Transmission spectral curves of different period numbers S
    Transmission spectral curve of fused silica
    Structure diagram of front surface film
    Theoretical spectral curve of front surface
    Structure diagram of back surface film
    Theoretical spectral curve of back surface
    Theoretical spectral curve of double-sided transmission. (a) 125-425 nm; (b) 225-235 nm
    Sample film craking map
    Degree of film craking at different deposition temperatures. (a) 200 ℃; (b) 250 ℃; (c) 300 ℃
    Degree of film craking at different background vacuum. (a) 4.0×10-4 Pa; (b) 5.0×10-4 Pa; (c) 6.0×10-4 Pa
    Stress curves of thin films under different ion source parameters
    Degree of film craking at different ion source parameters. (a) 0 V/0 A; (b) 100 V/0.7 A; (c) 130 V/1 A; (d) 200 V/2 A
    Test spectral curve of front surface. (a) 200-425 nm; (b) 224-240 nm
    Error inversion spectral curve. (a) 200-425 nm; (b) 225-240 nm
    Test transmission curves of double-sided coating. (a) 115-425 nm; (b) 225-237 nm
    • Table 1. Thin film deposition process parameters

      View table

      Table 1. Thin film deposition process parameters

      MaterialBackground vacuum /(×10-4 Pa)

      Deposition

      temperature /℃

      Ion source cleaning time /s

      Deposition rate /

      (nm·s-1

      Gas flow O2 /

      (cm3·min-1

      Al2O353001200.315
      AlF353001200.60
    • Table 2. Thin film deposition process parameters

      View table

      Table 2. Thin film deposition process parameters

      Material

      Background vacuum /

      (×10-4 Pa)

      Deposition

      temperature /℃

      Ion source

      Deposition rate /

      (nm·s-1

      Gas flow O2 /

      (cm3·min-1

      Anode voltage /VAnode current /A
      Al2O343000/100/130/2000/0.7/1/20.315
      AlF343000.60
    • Table 3. Substrate surface shape changes for different ion source parameters

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      Table 3. Substrate surface shape changes for different ion source parameters

      Ion source parameter0 V/0 A100 V/0.7 A130 V/1 A200 V/2 A
      SurfaceshapeBeforecoating
      Aftercoating
      3.529λ3.376λ3.237λ2.869λ
    • Table 4. Thin film deposition process parameters

      View table

      Table 4. Thin film deposition process parameters

      Material

      Backgroundvacuum /

      (×10-4 Pa)

      Deposition

      temperature /

      Ion source

      Deposition rate /

      (nm·s-1

      Gas flow O2 /

      (cm3·min-1

      Anode voltage /VAnode current /A
      Al2O3430020020.315
      AlF343000.60
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    Yuanhao Cai, Xiuhua Fu, Zhaowen Lin, Ben Wang, Zhuobin Huang, Yonggang Pan, Suotao Dong, Guangyuan Fu. Preparation of Deep Ultraviolet High-Steepness Filter Film[J]. Acta Optica Sinica, 2024, 44(7): 0731001

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    Paper Information

    Category: Thin Films

    Received: Dec. 12, 2023

    Accepted: Jan. 10, 2024

    Published Online: Apr. 11, 2024

    The Author Email: Xiuhua Fu (goptics@126.com)

    DOI:10.3788/AOS231921

    CSTR:32393.14.AOS231921

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