[1] Jagerska J, Jouy P, Hugi A et al. Dual-wavelength quantum cascade laser for trace gas spectroscopy[J]. Appl. Phys. Lett, 105, 161109(2014).

[2] Shang Y, Ye X, Cao L et al. Coaxial dual-wavelength interferometric method for a thermal infrared focal-plane-array with integrated gratings[J]. Scientific Reports 2016, 6, 25993.

[3] Siebert K J, Quast H, Leonhardt R et al. Continuous-wave all-optoelectronic terahertz imaging[J]. Appl. Phys. Lett, 80, 3003-3005(2002).

[4] Mei J, Zhong K, Wang M et al. Widely-tunable high-repetition-rate terahertz generation in GaSe with a compact dual-wavelength KTP OPO around 2 μm[J]. Opt. Express 2016, 24, 23368-23375.

[5] ZHANG Ji-Ye, LI Xue, ZHANG Jian-Wei et al. Research progress of vertical-cavity surface-emitting laser[J]. Chinese Journal of Luminescence.

[6] Paquet R, Blin S, Myara M et al. Coherent continuous-wave dual-frequency high-Q external-cavity semiconductor laser for GHz-THz applications[J]. Opt. Lett, 41, 3751-3754(2016).

[7] Shutts S, Smowton P M, Krysa A B. Dual-wavelength InP quantum dot lasers[J]. Appl. Phys. Lett, 104, 241106(2014).

[8] Price R K, Verma V B, Tobin K E et al. Y-branch surface-etched distributed bragg reflector lasers at 850 nm for optical heterodyning[J]. IEEE Photonics Technol. Lett, 19, 1610-1612(2007).

[9] Nechay K, Mereuta A, Paranthoen C et al. High-power 760 nm VECSEL based on quantum dot gain mirror[J]. IEEE J. Quantum Electron, 56, 1-4(2020).

[10] Hou G Y, Shu S L, Peng J et al. High power (>27 W) semiconductor disk laser based on pre-metalized diamond heat-spreader[J]. IEEE Photonics Journal 2019, 11, 1-8.

[11] Calvez S, Hastie J E, Guina M et al. Semiconductor disk lasers for the generation of visible and ultraviolet radiation[J]. Laser & Photonics Reviews 2009, 3, 407-434.

[12] Jiang L D, Zhu R J, Jiang M H et al. Frequency doubling of an InGaAs multiple quantum wells semiconductor disk laser[J]. Superlattices Microstruct, 113, 785-790(2018).

[13] Alfieri C G E, Waldburger D, Golling M et al. High-power sub-300-femtosecond quantum dot semiconductor disk lasers[J]. IEEE Photonics Technol. Lett, 30, 525-528(2018).

[14] Abram R H, Gardner K S, Riis E et al. Narrow linewidth operation of a tunable optically pumped semiconductor laser[J]. Opt. Express 2004, 12, 5434-5439.

[15] WANG Xiao-Long, ZOU Yong-Gang, HAO Yong-Qin et al. Characteristics of 850 nm liquid crystal tunable VCSEL with polarization stability and wide tuning range[J]. Chinese Journal of Luminescence.

[16] Hessenius C, Lukowski M, Fallahi M. High-power tunable two-wavelength generation in a two chip co-linear T-cavity vertical external-cavity surface-emitting laser[J]. Appl. Phys. Lett, 101, 121110(2012).

[17] Lukowski M, Hessenius C, Bedford R et al. Tunable type II intracavity difference frequency generation at 5.4 mu m in a two chip vertical external cavity surface emitting laser[J]. Opt. Lett, 40, 4174-4177(2015).

[18] Qiu X L, Wang S S, Zhang X J et al. Dual-wavelength external-cavity surface-emitting laser[J]. Acta Physica Sinica 2019, 68, 114204.

[19] Leinonen T, Ranta S, Laakso A et al. Dual-wavelength generation by vertical external cavity surface-emitting laser[J]. Opt. Express 2007, 15, 13451-13456.

[20] Jasik A, Sokol A K, Broda A et al. Dual-wavelength vertical external-cavity surface-emitting laser: strict growth control and scalable design[J]. Applied Physics B-Lasers And Optics 2016, 122, 23.

[21] Scheller M, Yarborough J M, Moloney J V et al. Room temperature continuous wave milliwatt terahertz source[J]. Opt. Express 2010, 18, 27112-27117.

[22] Fan L, Fallahi M, Hader J et al. Linearly polarized dual-wavelength vertical-external-cavity surface-emitting laser[J]. Appl. Phys. Lett, 90, 181124(2007).

[23] Zhang J, Zhang J, Zhang Z et al. High-power vertical external-cavity surface-emitting laser emitting switchable wavelengths[J]. Opt. Express 2020, 28, 32612-32619.

[24] Mateo C, Brauch U, Schwarzback T et al. Enhanced efficiency of AlGaInP disk laser by in-well pumping[J]. Opt. Express, 23, 2472-2486(2015).

[25] Yoo B S, Park H H, Lee E H. IEEE. periodic gain surface-emitting lasers with low threshold current densities[C], 03, 254-255.

[26] Zhang J Y, Zhang J W, Zeng Y G et al. Design of gain region of high-power vertical external cavity surface emitting semiconductor laser and its fabrication[J]. Acta Physica Sinica 2020, 69, 054204.

[27] LIN Wei-Shu, QIU Zhi-Ren, XU Wen-Cheng. Femtosecond relaxation of excited carriers in AlGaAs/GaAs multiple quantum wells[J]. Acta Optica Sinica.

[28] XU Zhong-Ying, LI Yu-Zhang, XU Jun-Ying, XU Ji-Zong, ZHENG Bao-Zhen, ZHUANG Wei-Hua, GE Wei-Kun. Hot carrier relaxation processes in GaAs-GaAlAs multiple quantum well structures[J]. Acta Physica Sinica.

[29] Pelouch W S, Ellingson R J, Powers P E et al. Comparison of hot-carrier relaxation in quantum wells and bulk GaAs at high carrier densities[J]. Physical Review B, 45, 1450-1453(1992).