Fig. 1. (a) Epitaxial structure of dual wavelength VECSEL gain chip, (b) Energy-band and standing wave distribution diagrams of active regions in the gain chip

Fig. 2. Schematic of the VECSEL setup

Fig. 3. Edge photoluminescence spectra of VECSEL gain chip under different pumping powers when the temperature was controlled at -10 ℃ by TEC

Fig. 4. The output power changing with pump power at temperatures of -10 °C，0 °C and 10°C controlled by TEC

Fig. 5. The lasing wavelength changing with pump powers at -10 °C controlled by TEC

Fig. 6. Pulse shape of the output laser beam from the VECSEL under pumping powers of（a）2.5 W，（b）3.5 W，（c）5.0 W at -10℃controlled by TEC

Fig. 7. Illustration of carrier transport in active region of gain chip under low (a), medium (b) and high (c) pump conditions

Fig. 8. Decay curve of VECSEL chip at different temperature of -10 ℃，0 ℃ and 10 ℃

Fig. 9. Emission far-fields of VECSEL under the pumping power of 5 W at temperature of -10 ℃，Inserted is beam profile from our VECSEL captured by a CCD camera