Electronics and Packaging, Volume. 25, Issue 7, 70108(2025)

Method and Simulation Analysis of Inorganic Buffer Layer for Reducing TGV Stress in Glass Substrate

ZHAO Quanlu, ZHAO Jingyi, DING Shanjun, WANG Qidong, CHEN Chuan*, and YU Zhongyao
Author Affiliations
  • Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
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    References(7)

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    [8] [8] YEO A H, BOON S S S, WEE D H S, et al. Low temperature physical vapour deposited Cu seed layer for temporary bonded wafer substrates[C]//2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC), Singapore, 2021: 624-627.

    [11] [11] AHMED O, OKORO C, POLLARD S, et al. The effect of materials and design on the reliability of through-glass vias for 2.5 D integrated circuits: a numerical study[J]. Multidiscipline Modeling in Materials and Structures, 2020, 17(2): 451-464.

    [15] [15] YANG P Q, WU Y T, WEI T C. Combining molecular interaction and physical anchoring effect to achieve ultra-high adhesion electroless copper plating on glass substrates[J]. Journal of the Electrochemical Society, 2025, 172(3): 032507.

    [16] [16] KASATKIN I, KNIEP B, RESSLER T. Cu/ZnO and Cu/ZrO2 interactions studied by contact angle measurement with TEM[J]. Physical chemistry chemical physics: PCCP, 2007, 9(7): 878-883.

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    ZHAO Quanlu, ZHAO Jingyi, DING Shanjun, WANG Qidong, CHEN Chuan, YU Zhongyao. Method and Simulation Analysis of Inorganic Buffer Layer for Reducing TGV Stress in Glass Substrate[J]. Electronics and Packaging, 2025, 25(7): 70108

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    Paper Information

    Special Issue:

    Received: Jun. 6, 2025

    Accepted: Aug. 26, 2025

    Published Online: Aug. 26, 2025

    The Author Email: CHEN Chuan (chenchuan@ime.ac.cn)

    DOI:10.16257/j.cnki.1681-1070.2025.0159

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