Method and Simulation Analysis of Inorganic Buffer Layer for Reducing TGV Stress in Glass Substrate

ZHAO Quanlu; ZHAO Jingyi; DING Shanjun; WANG Qidong; CHEN Chuan; YU Zhongyao

doi:10.16257/j.cnki.1681-1070.2025.0159

Electronics and Packaging, Volume. 25, Issue 7, 70108(2025)

Method and Simulation Analysis of Inorganic Buffer Layer for Reducing TGV Stress in Glass Substrate

ZHAO Quanlu, ZHAO Jingyi, DING Shanjun, WANG Qidong, CHEN Chuan^*, and YU Zhongyao

Author Affiliations

Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

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ZHAO Quanlu, ZHAO Jingyi, DING Shanjun, WANG Qidong, CHEN Chuan, YU Zhongyao. Method and Simulation Analysis of Inorganic Buffer Layer for Reducing TGV Stress in Glass Substrate[J]. Electronics and Packaging, 2025, 25(7): 70108

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Paper Information

Special Issue:

Received: Jun. 6, 2025

Accepted: Aug. 26, 2025

Published Online: Aug. 26, 2025

The Author Email: CHEN Chuan (chenchuan@ime.ac.cn)

DOI:10.16257/j.cnki.1681-1070.2025.0159

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