Electronics and Packaging, Volume. 25, Issue 7, 70108(2025)

Method and Simulation Analysis of Inorganic Buffer Layer for Reducing TGV Stress in Glass Substrate

ZHAO Quanlu, ZHAO Jingyi, DING Shanjun, WANG Qidong, CHEN Chuan*, and YU Zhongyao
Author Affiliations
  • Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
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    Glass substrate has emerged as a key material for advanced packaging due to its superior mechanical properties and high flatness. To reduce the glass core stress, a scheme of sintering an inorganic buffer layer between the TGV glass and copper on the glass substrate is proposed. To ensure compatibility with subsequent electroless metallization processes, simulation analysis is conducted to analyze the effects of three types of inorganic buffer layers, namely ZnO, TiO2, and ZrO2, on the stress distribution of the glass core. At the same time, the influences of buffer layer thickness, glass core thickness, and TGV diameter on the glass core stress are also investigated. The results show that, compared with TGV filled with pure copper, the proposed scheme can effectively reduce the stress of the glass core during the heating process in the lamination stage. Among them, the glass core stress of the sintered 5 μm TiO2 is reduced by 66.58%. At the same time, the thicker the buffer layer and the smaller the TGV diameter, the lower the glass core stress during the TGV heating process of the glass substrate. These findings can provide an important reference for reducing the stress of the glass substrate TGV.

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    ZHAO Quanlu, ZHAO Jingyi, DING Shanjun, WANG Qidong, CHEN Chuan, YU Zhongyao. Method and Simulation Analysis of Inorganic Buffer Layer for Reducing TGV Stress in Glass Substrate[J]. Electronics and Packaging, 2025, 25(7): 70108

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    Paper Information

    Special Issue:

    Received: Jun. 6, 2025

    Accepted: Aug. 26, 2025

    Published Online: Aug. 26, 2025

    The Author Email: CHEN Chuan (chenchuan@ime.ac.cn)

    DOI:10.16257/j.cnki.1681-1070.2025.0159

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