Chinese Journal of Lasers, Volume. 45, Issue 5, 501006(2018)

Narrow Linewidth 1064 nm Distributed Bragg Reflector Semiconductor Laser

Jia Baoshan1,2、*, Wang Hao1, Li Aimin1, Wang Menghe1, Du Jiyao1, Li Hui1, Li Zaijin1,3, Bo Baoxue1, and Qu Yi1,3
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    References(19)

    [9] Feise D, Blume G, Pohl J. et al. Sub-MHz linewidth of 633 nm diode lasers with internal surface DBR gratings[C]. SPIE, 8640, 86400A(2003).

    [11] Jedrzejczyk D, Asbahr P, Pulka M. Coupling of DBR tapered diode laser radiation into a single-mode-fiber at high powers[C]. SPIE, 8965, 89651A(2014).

    [14] Martin H H, Hong K N, Kechang S. et al. High-power distributed Bragg reflector lasers for green-light generation[C]. SPIE, 6116, 61160M(2006).

    [18] Zhang Y M[M]. Applied optics(2006).

    [19] Su S T, Tang S F, Chen T C. et al. Temperature-dependent VCSEL optical characteristics based on graded AlxGa1-xAs/GaAs distributed Bragg reflectors: reflectivity and beam profile analyses[C]. SPIE, 6132, 61320L(2006).

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    Jia Baoshan, Wang Hao, Li Aimin, Wang Menghe, Du Jiyao, Li Hui, Li Zaijin, Bo Baoxue, Qu Yi. Narrow Linewidth 1064 nm Distributed Bragg Reflector Semiconductor Laser[J]. Chinese Journal of Lasers, 2018, 45(5): 501006

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    Paper Information

    Category: laser devices and laser physics

    Received: Sep. 26, 2017

    Accepted: --

    Published Online: May. 2, 2018

    The Author Email: Baoshan Jia (bsjia@163.com)

    DOI:10.3788/CJL201845.0501006

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