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Chinese Journal of Lasers, Volume. 45, Issue 5, 501006(2018)

Narrow Linewidth 1064 nm Distributed Bragg Reflector Semiconductor Laser

Jia Baoshan1,2、*, Wang Hao1, Li Aimin1, Wang Menghe1, Du Jiyao1, Li Hui1, Li Zaijin1,3, Bo Baoxue1, and Qu Yi1,3
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    AbstractGet PDF(in Chinese)
    Figures&Tables (11)
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    References (19)
    Cited By (3)
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    Figures & Tables(11)
    Structure of 1064 nm DBR semiconductor laser

    Fig. 1. Structure of 1064 nm DBR semiconductor laser

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    Peak reflectivity of DBR with different grating area lengths at the wavelength of 1064 nm

    Fig. 2. Peak reflectivity of DBR with different grating area lengths at the wavelength of 1064 nm

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    Spectral fitting curve of DBR laser with the grating area length of 400 μm

    Fig. 3. Spectral fitting curve of DBR laser with the grating area length of 400 μm

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    Simulation curves of output spectrum and gain near the laser frequency corresponding to 1064 nm

    Fig. 4. Simulation curves of output spectrum and gain near the laser frequency corresponding to 1064 nm

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    Simulation curve between output power and injection current of 1064 nm DBR semiconductor laser

    Fig. 5. Simulation curve between output power and injection current of 1064 nm DBR semiconductor laser

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    SEM image of ridge waveguide cleavage plane

    Fig. 6. SEM image of ridge waveguide cleavage plane

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    SEM image of Bragg grating after etching

    Fig. 7. SEM image of Bragg grating after etching

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    Emitting spectrum of 1064 nm DBR semiconductor laser

    Fig. 8. Emitting spectrum of 1064 nm DBR semiconductor laser

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    LIV test curves of 1064 nm DBR semiconductor laser

    Fig. 9. LIV test curves of 1064 nm DBR semiconductor laser

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    • Table 1. Parameters in DBR grating reflectivity simulation

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      Table 1. Parameters in DBR grating reflectivity simulation

      ParameterValue /μm
      Background index3.21
      Index difference0.1
      Waveguide width3.5
      Waveguide height2.5
      Slab height1.25

    • Table 2. Epitaxial layer parameters of 1064 nm DBR semiconductor laser

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      Table 2. Epitaxial layer parameters of 1064 nm DBR semiconductor laser

      No.Thickness /μmLayerDoping concentration /cm-3
      90.1p-GaAs1019
      81.5p-Al0.4Ga0.6As1018
      70.1Al0.15Ga0.85AsNone
      60.01GaAsNone
      50.0075In0.29Ga0.71AsNone
      40.01GaAsNone
      30.1Al0.15Ga0.85AsNone
      21.7n-Al0.4Ga0.6As1018
      10.5n-GaAs2×1018
      0100n-GaAs2×1018
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    Jia Baoshan, Wang Hao, Li Aimin, Wang Menghe, Du Jiyao, Li Hui, Li Zaijin, Bo Baoxue, Qu Yi. Narrow Linewidth 1064 nm Distributed Bragg Reflector Semiconductor Laser[J]. Chinese Journal of Lasers, 2018, 45(5): 501006

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    Paper Information

    Category: laser devices and laser physics

    Received: Sep. 26, 2017

    Accepted: --

    Published Online: May. 2, 2018

    The Author Email: Baoshan Jia (bsjia@163.com)

    DOI:10.3788/CJL201845.0501006

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology