The 1064 nm distributed Bragg reflector (DBR) semiconductor laser has the characteristics of narrow linewidth and stable output, and it has a broad application prospect in the field of free space laser communication used as seed light source. A single mode and narrow linewidth 1064 nm DBR semiconductor laser is designed． Metalorganic chemical vapor deposition (MOCVD) technique is used to grow InGaAs strained quantum well laser material, and a ridge waveguide 1064 nm DBR semiconductor laser with the cavity length of 1200 μm is fabricated. When injection current is 70 mA, the continuous output power of the laser can reach 7 mW, and 3 dB spectral linewidth of the laser is 0.12 nm at room temperature.