Laser Slicing Technology for 12 inch Silicon Carbide Crystals (Invited)

Linlin Che; Qiu Chen; Bixue Li; Jianfei Zhang; Haoyu Fan; Xing Zhang; Xiufei Hu; Qingyu Li; Baitao Zhang; Xianglong Yang; Rongkun Wang; Xiufang Chen; Xiangang Xu

doi:10.3788/CJL250962

Chinese Journal of Lasers, Volume. 52, Issue 18, 1803033(2025)

Laser Slicing Technology for 12 inch Silicon Carbide Crystals (Invited)

Linlin Che^1,2, Qiu Chen^1,2、***, Bixue Li^1,2, Jianfei Zhang^1,2, Haoyu Fan^1,2, Xing Zhang^1,2, Xiufei Hu^1,2, Qingyu Li^1,2, Baitao Zhang^1,2, Xianglong Yang^1,2, Rongkun Wang^1,2、*, Xiufang Chen^1,2、**, and Xiangang Xu^1,2

Author Affiliations

¹Institute of Novel Semiconductors, Shandong University, Jinan 250100, Shandong , China

²State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, Shandong , China

show less

Abstract Get PDF(in Chinese)

References(19)

[1] Choyke W J, Pensl G. Physical properties of SiC[J]. MRS Bulletin, 22, 25-29(1997).

[2] Roccaforte F, Fiorenza P, Greco G et al. Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices[J]. Microelectronic Engineering, 187/188, 66-77(2018).

[3] Lukin D M, Dory C, Guidry M A et al. 4H-silicon-carbide-on-insulator for integrated quantum and nonlinear photonics[J]. Nature Photonics, 14, 330-334(2020).

[4] Tang X, Irvine K G, Zhang D P et al. Linear electro-optic effect in cubic silicon carbide[J]. Applied Physics Letters, 59, 1938-1939(1991).

[5] Sarro P M. Silicon carbide as a new MEMS technology[J]. Sensors and Actuators A: Physical, 82, 210-218(2000).

[6] Zhang X J, Zhang Z Y, Zheng L G et al. Manufacturing and testing SiC aspherical mirrors in space telescopes[J]. Proceedings of SPIE, 6024, 602402(2006).

[7] Feng S R, Zheng Z Y, Cheng Y et al. Strain release in GaN epitaxy on 4° off-axis 4H-SiC[J]. Advanced Materials, 34, 2201169(2022).

[8] Kumar A, Melkote S N. Diamond wire sawing of solar silicon wafers: a sustainable manufacturing alternative to loose abrasive slurry sawing[J]. Procedia Manufacturing, 21, 549-566(2018).

[9] Pham Q P, Quynh Hoa L N, Haq M A et al. Study on ductile-to-brittle transition behavior in fixed diamond abrasive wire sawing process of monocrystalline silicon ingot[J]. International Journal of Engineering Trends and Technology, 72, 193-207(2024).

[10] Wang S B, Hong Z Q, Zhang J L et al. Dynamic control of ultrafast laser polarization for silicon carbide wafer cutting[J]. Laser & Optoelectronics Progress, 61, 2314005(2024).

[11] Kim E, Shimotsuma Y, Sakakura M et al. 4H-SiC wafer slicing by using femtosecond laser double-pulses[J]. Optical Materials Express, 7, 2450-2460(2017).

[12] Hirata K. New laser slicing technology named KABRA process enables high speed and high efficiency SiC slicing[J]. Proceedings of SPIE, 10520, 1052003(2018).

[13] Han S F, Yu H J, He C J et al. Laser slicing of 4H-SiC wafers based on picosecond laser-induced micro-explosion via multiphoton processes[J]. Optics & Laser Technology, 154, 108323(2022).

[14] Wang H W, Chen Q, Yao Y P et al. Influence of surface preprocessing on 4H-SiC wafer slicing by using ultrafast laser[J]. Crystals, 13, 15(2023).

[15] Zhang Y L, Xie X Z, Huang Y A et al. Internal modified structure of silicon carbide prepared by ultrafast laser for wafer slicing[J]. Ceramics International, 49, 5249-5260(2023).

[16] Wang H W, Cen W X, Wang L Q et al. Experimental study on the formation mechanism of internal modified layers in single-crystal silicon carbide induced by 532 nm nanosecond laser[J/OL]. Chinese Journal of Lasers, 52, 2402402(2025). https:∥www.opticsjournal.net/Articles/z250708/EarlyPosting

[17] Yao Y P, Chen Q, Li B X et al. Influence of crystal orientation and incident plane on n-type 4H-SiC wafer slicing by using picosecond laser[J]. Optics & Laser Technology, 182, 112174(2025).

[18] Chen Q, Yao Y P, Zhang J F et al. Effect of nitrogen doping concentration on 4H-SiC laser slicing[J]. Journal of the American Ceramic Society, 108, e20555(2025).

[19] Salter P S, Baum M, Alexeev I et al. Exploring the depth range for three-dimensional laser machining with aberration correction[J]. Optics Express, 22, 17644-17656(2014).

Tools

Get Citation

Copy Citation Text

Linlin Che, Qiu Chen, Bixue Li, Jianfei Zhang, Haoyu Fan, Xing Zhang, Xiufei Hu, Qingyu Li, Baitao Zhang, Xianglong Yang, Rongkun Wang, Xiufang Chen, Xiangang Xu. Laser Slicing Technology for 12 inch Silicon Carbide Crystals (Invited)[J]. Chinese Journal of Lasers, 2025, 52(18): 1803033

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Materials

Received: Jun. 16, 2025

Accepted: Jul. 21, 2025

Published Online: Sep. 17, 2025

The Author Email: Qiu Chen (chenqiu0629@sdu.edu.cn), Rongkun Wang (wrk@sdu.edu.cn), Xiufang Chen (cxf@sdu.edu.cn)

DOI:10.3788/CJL250962

CSTR:32183.14.CJL250962

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology