Fig. 1. Focusing-induced aberration caused by refraction at the 4H-SiC‒air interface

Fig. 2. Spherical aberration compensation image corresponding to a cutting depth of 230 μm

Fig. 3. Spot simulation images corresponding to different cutting depths in the case of the same compensation. (a) 210 μm; (b) 220 μm; (c) 230 μm; (d) 240 μm; (e) 250 μm

Fig. 4. Correlation between focal spot length of the laser and preset cutting depth in 4H-SiC slicing

Fig. 5. Relationship between preset cutting depth deviation and the absolute of actual depth deviation

Fig. 6. Surface height profile of 12 inch 4H-SiC ingot

Fig. 7. Laser slicing technology for large-size 4H-SiC. (a) Laser slicing system; (b) ultrasonic separation system; (c)12-inch 4H-SiC wafers cut by laser slicing

Fig. 8. Surface profile test results of 4H-SiC wafer after delamination

Fig. 9. Thickness distribution of 4H-SiC wafer after delamination

Fig. 10. White light interference images and surface undulation profile of 4H-SiC wafer at center and edge positions after delamination (A: wafer center; B: wafer facet; C‒F: wafer edge)