Microelectronics, Volume. 53, Issue 2, 333(2023)
Study on Avalanche Multiplication Factor of 4H-SiC p-n Junction Based on Accurate Impact Ionization Model
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XIONG Juncheng, HUANG Haimemg, ZHANG Zimin, ZHANG Guoyi. Study on Avalanche Multiplication Factor of 4H-SiC p-n Junction Based on Accurate Impact Ionization Model[J]. Microelectronics, 2023, 53(2): 333
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Received: May. 4, 2022
Accepted: --
Published Online: Dec. 15, 2023
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