[1] [1] Liu Fei, Li Yanqiu. Design of high numerical aperture projection objective for industrial extreme ultraviolet lithography［J］. Acta Optica Sinica, 2011, 31(2): 0222003

[2] [2] H. Kang, S. Hansen, Jan van Schoot et al.. EUV simulation extension study for mask shadowing effect and its correction［C］. SPIE, 2008, 6921: 69213I

[3] [3] T. Schmoeller, T. Klimpel, I. Kim et al.. EUV pattern shift compensation strategies［C］. SPIE, 2008, 6921: 69211B

[4] [4] M. Born, E. Wolf. Principles of Optics［M］. Cambridge: Cambridge University Press, 2001. 412～514

[5] [5] P. Evanschitzky, A. Erdmann. Fast near field simulation of optical and EUV masks using the waveguide method［C］. SPIE, 2007, 6533: 65330Y

[6] [6] K. Adam. Domain Decomposition Methods for the Electromagnetic Simulation of Scattering from Three-Dimensional Structures with Applications in Lithography［D］. Berkeley: University of California, 2001

[7] [7] C. Sambale, T. Schmoeller, A. Erdmann et al.. Rigorous simulation of defective EUV multilayer masks［C］. SPIE, 2003, 5256: 1239～1248

[8] [8] C. H. Clifford, A.R. Neureuther. Fast simulation of buried EUV mask defect interaction with absorber features［C］. SPIE, 2007, 6517: 65170A

[9] [9] Cao Yuting, Wang Xiangzhao, Qiu Zicheng et al.. Simplified model for mask diffraction in extreme-ultraviolet projection lithography［J］. Acta Optica Sinica, 2011, 31(4): 0405001

[10] [10] Cao Yuting, Wang Xiangzhao, A. Erdmann et al.. Analytical model for EUV mask diffraction field calculation［C］. SPIE, 2011, 8171: 81710N

[11] [11] Tim Fuhner, Thomas Schnattinger, Gheorghe Ardelean et al.. Dr.LiTHO: a development and research lithography simulator［C］. SPIE, 2007, 6520: 65203F

[12] [12] M. C. Lam, A. R. Neureuther. Simplified model for absorber feature transmissions on EUV masks［C］. SPIE, 2006, 6349: 63492H

[13] [13] Vivek Bakshi. EUV Lithography［M］. Washington: SPIE Press, 2009. 326～373