Fig. 1. Configuration of the proposed fourth-harmonic mixer

Fig. 2. Cross section view and parasitic parameters of the planar Schottky diode

Fig. 3. (a) The 3D EM model of the planar Schottky diode (b) The picture of the Schottky diode applied manufactured by CETC-13

Fig. 4. (a) Simplified model of the diode junction (b) Equivalent circuit of the Schottky diode

Fig. 5. Dimensions of the Schottky diode applied in the proposed fourth-harmonic mixer

Fig. 6. (a) Optimum conversion loss of the mixer with different C_j0, (b) Optimum LO power of the mixer with different C_j0

Fig. 7. (a) Topology and simulation results of the wide stopband and high rejection LO low pass filter

Fig. 8. Simulated performances of the proposed fourth-harmonic mixer with different LO power (a) SSB conversion loss, (a) DSB noise temperature

Fig. 9. Inside photograph of the fourth-harmonic mixer

Fig. 10. Test setup for conversion loss of the fourth-harmonic mixer

Fig. 11. Test setup for noise temperature of the fourth-harmonic mixer

Fig. 12. Comparison between simulated conversion loss and measured results of the proposed mixer with fixed IF frequency of 1 GHz and optimum LO power of 7 mW