Optoelectronic Performance Optimization of InGaN-Based Violet Laser Diodes by Composite Electron Blocking Layers

Qiling Tan; Shuping Li

doi:10.3788/AOS231298

Acta Optica Sinica, Volume. 43, Issue 20, 2014003(2023)

Optoelectronic Performance Optimization of InGaN-Based Violet Laser Diodes by Composite Electron Blocking Layers

Qiling Tan and Shuping Li^*

Author Affiliations

College of Physical Science and Technology, Xiamen University, Xiamen 361005, Fujian , China

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Abstract Get PDF(in Chinese)

Figures & Tables(18)

Fig. 1. Schematic of reference structure A with optimized structures B and C

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Fig. 2. P-I characteristic curves of experimental and simulated reference structures

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Fig. 3. Wall plug efficiency versus current for partial samples in series Ⅰ

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Fig. 4. Variation of wall plug efficiency with insert layer Al content in series Ⅰ at 1200 mA injection current

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Fig. 5. Variation of wall plug efficiency with insert layer Al content for each sample in series I-V at 1200 mA injection current

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Fig. 6. Energy band of LD Ⅳ-0.20, LD Ⅳ-0.30, and LD Ⅳ-0.40 at 1200 mA injection current. (a) Conduction band; (b) valence band

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Fig. 7. Carrier concentration distribution of LD Ⅳ-0.20, LD Ⅳ-0.30, and LD Ⅳ-0.40 at 1200 mA injection current. (a) Electrons; (b) holes

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Fig. 8. Photovoltaic performance of LD Ⅰ-0.30, LD Ⅱ-0.30, LD Ⅲ-0.30, LD Ⅳ-0.30, and LD Ⅴ-0.30 with the thickness of insert layer at 1200 mA injection current. (a) Optical power and wall plug efficiency; (b) voltage

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Fig. 9. Energy band structure of LD Ⅳ-0.30 at 1200 mA injection current

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Fig. 10. Valence band distribution of LD Ⅰ-0.30, LD Ⅱ-0.30, LD Ⅲ-0.30, LD Ⅳ-0.30, and LD Ⅴ-0.30 at 1200 mA injection current

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$Wall plug efficiency of LD 1, LD 2, LD 3, LD 4, LD 5, and LD 6 at 1200 mA injection current, the dashed line is the wall plug efficiency of structure B with constant Al atomic number fraction at this injection current$

Fig. 11. Wall plug efficiency of LD 1, LD 2, LD 3, LD 4, LD 5, and LD 6 at 1200 mA injection current, the dashed line is the wall plug efficiency of structure B with constant Al atomic number fraction at this injection current

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Fig. 12. Energy band of LD 1, structure B, and LD 5 at 1200 mA injection current. (a) Conduction band; (b) valence band

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Fig. 13. Carrier concentration distribution of LD 1, structure B, and LD 5 at 1200 mA injection current. (a) Electrons; (b) holes

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Fig. 14. Photoelectric properties of structures A, B, and C. (a) Voltage and wall plug efficiency versus current; (b) radiation spectra at 1200 mA injection current

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Table 1. Information on each layer of reference structure A

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Table 1. Information on each layer of reference structure A

Layer	Thickness /nm	Doping concentration /cm^-3
p-GaN，contact	40	1×10²⁰
p-Al_0.06Ga_0.94N，CL	600	2×10¹⁹
Al_0.15Ga_0.85N，EBL	20	5×10¹⁹
u-GaN，UWG	100	0
GaN，QB	14	0
In_0.15Ga_0.85N，QW	2.5	0
n-GaN，LWG	120	5×10¹⁷
n-Al_0.08Ga_0.92N，CL	1000	3×10¹⁸
n-GaN，substrate	1000	3×10¹⁸

Table 2. Names for each series of samples with different insert layer and original EBL thicknesses and Al atomic number fraction

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Table 2. Names for each series of samples with different insert layer and original EBL thicknesses and Al atomic number fraction

Thickness /nm	Sample name
Thickness /nm	x=0.15	x=0.18	x=0. 20	x=0.23	x=0.25	x=0.27	x=0.30	x=0.35	x=0.40
1+19	LD Ⅰ-0.15	LD Ⅰ-0.18	LD Ⅰ-0.20	LD Ⅰ-0.23	LD Ⅰ-0.25	LD Ⅰ-0.27	LD Ⅰ-0.30	LD Ⅰ-0.35	LD Ⅰ-0.40
5+15	LD Ⅱ-0.15	LD Ⅱ-0.18	LD Ⅱ-0.20	LD Ⅱ-0.23	LD Ⅱ-0.25	LD Ⅱ-0.27	LD Ⅱ-0.30	LD Ⅱ-0.35	LD Ⅱ-0.40
10+10	LD Ⅲ-0.15	LD Ⅲ-0.18	LD Ⅲ-0.20	LD Ⅲ-0.23	LD Ⅲ-0.25	LD Ⅲ-0.27	LD Ⅲ-0.30	LD Ⅲ-0.35	LD Ⅲ-0.40
15+5	LD Ⅳ-0.15	LD Ⅳ-0.18	LD Ⅳ-0.20	LD Ⅳ-0.23	LD Ⅳ-0.25	LD Ⅳ-0.27	LD Ⅳ-0.30	LD Ⅳ-0.35	LD Ⅳ-0.40
19+1	LD Ⅴ-0.15	LD Ⅴ-0.18	LD Ⅴ-0.20	LD Ⅴ-0.23	LD Ⅴ-0.25	LD Ⅴ-0.27	LD Ⅴ-0.30	LD Ⅴ-0.35	LD Ⅴ-0.40

Table 3. Electron and hole barrier heights of LD Ⅰ-0.30, LD Ⅱ-0.30, LD Ⅲ-0.30, LD Ⅳ-0.30, and LD Ⅴ-0.30 at 1200 mA injection current
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Table 3. Electron and hole barrier heights of LD Ⅰ-0.30, LD Ⅱ-0.30, LD Ⅲ-0.30, LD Ⅳ-0.30, and LD Ⅴ-0.30 at 1200 mA injection current
Carrier
LD
Ⅰ-30
LD
Ⅱ-30
LD
Ⅲ-30
LD
Ⅳ-30
LD
Ⅴ-30
Electron 292.4 307.4 307.0 305.9 290.5
Hole 165.1 176.2 180.6 184.9 194.3

Table 4. Photoelectric properties of structures A, B, and C
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Table 4. Photoelectric properties of structures A, B, and C
Structure Threshold voltage /V WPE /% Radiation wavelength /nm
A 4.761 8.365 409.92
B 4.836 10.72 410.03
C 4.832 11.45 410.03

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Qiling Tan, Shuping Li. Optoelectronic Performance Optimization of InGaN-Based Violet Laser Diodes by Composite Electron Blocking Layers[J]. Acta Optica Sinica, 2023, 43(20): 2014003

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Paper Information

Category: Lasers and Laser Optics

Received: Jul. 24, 2023

Accepted: Sep. 6, 2023

Published Online: Oct. 23, 2023

The Author Email: Li Shuping (lsp@xmu.edu.cn)

DOI:10.3788/AOS231298

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Information on each layer of reference structure A

Table 1. Information on each layer of reference structure A

Table 2. Names for each series of samples with different insert layer and original EBL thicknesses and Al atomic number fraction

Table 2. Names for each series of samples with different insert layer and original EBL thicknesses and Al atomic number fraction

Table 3. Electron and hole barrier heights of LD Ⅰ-0.30, LD Ⅱ-0.30, LD Ⅲ-0.30, LD Ⅳ-0.30, and LD Ⅴ-0.30 at 1200 mA injection current

Table 3. Electron and hole barrier heights of LD Ⅰ-0.30, LD Ⅱ-0.30, LD Ⅲ-0.30, LD Ⅳ-0.30, and LD Ⅴ-0.30 at 1200 mA injection current

Table 4. Photoelectric properties of structures A, B, and C

Table 4. Photoelectric properties of structures A, B, and C