[1] [1] HE J Q, CHENG W C, WANG Q, et al. Recent advances in GaN-based power HEMT devices[J]. Advanced Electronic Materials, 2021, 7(4): 2001045.

[2] [2] FLACK T J, PUSHPAKARAN B N, BAYNE S B. GaN technology for power electronic applications: a review[J]. Journal of Electronic Materials, 2016, 45(6): 2673-2682.

[3] [3] ABDUL AMIR H A A, FAKHRI M A, ABDULKHALEQ ALWAHIB A. Review of GaN optical device characteristics, applications, and optical analysis technology[J]. Materials Today: Proceedings, 2021, 42: 2815-2821.

[4] [4] NAKAMURA S, FASOL G. The blue laser diode: GaN based light emitters and lasers[M]. Berlin: Springer Science & Business Media, 2013.

[5] [5] UTSUMI W, SAITOH H, KANEKO H, et al. Congruent melting of gallium nitride at 6 GPa and its application to single-crystal growth[J]. Nature Materials, 2003, 2(11): 735-738.

[6] [6] YOSHIDA T, OSHIMA Y, WATANABE K, et al. Ultrahigh-speed growth of GaN by hydride vapor phase epitaxy[J]. Physica Status Solidi C, 2011, 8(7/8): 2110-2112.

[7] [7] FUJITO K, KUBO S, NAGAOKA H, et al. Bulk GaN crystals grown by HVPE[J]. Journal of Crystal Growth, 2009, 311(10): 3011-3014.

[8] [8] WU J J, ZHAO L B, WEN D Y, et al. New design of nozzle structures and its effect on the surface and crystal qualities of thick GaN using a horizontal HVPE reactor[J]. Applied Surface Science, 2009, 255(11): 5926-5931.

[9] [9] DAM C E C, GRZEGORCZYK A P, HAGEMAN P R, et al. The effect of HVPE reactor geometry on GaN growth rate—experiments versus simulations[J]. Journal of Crystal Growth, 2004, 271(1/2): 192-199.

[10] [10] WU Y Z, CHEN C M, YU J X, et al. Optimizing HVPE flow field to achieve GaN crystal uniform growth[J]. Journal of Crystal Growth, 2023, 614: 127214.

[14] [14] CHENG Y T, LIU P, WU J J, et al. High uniform growth of 4-inch GaN wafer via flow field optimization by HVPE[J]. Journal of Crystal Growth, 2016, 445: 24-29.

[15] [15] GOGOVA D, LARSSON H, YAKIMOVA R, et al. Fast growth of high quality GaN[J]. Physica Status Solidi (a), 2003, 200(1): 13-17.