Journal of Infrared and Millimeter Waves, Volume. 43, Issue 4, 450(2024)
Mid-wavelength infrared nBn photodetectors based on InAs/InAsSb type-II superlattice with an AlAsSb/InAsSb superlattice barrier
Fig. 1. The nBn photodetector: (a) schematic diagram; (b) schematic band structure diagram
Fig. 2. The nBn photodetector at 150 K and -50 mV applied bias: (a) responsivity spectrum; (b) quantum efficiency spectrum:the inset represents the quantum efficiency of the nBn photodetector at 3.82 μm
Fig. 3. The nBn photodetector: (a) dark current density vs. applied bias characteristic at temperatures ranging from 100 K to 300 K; (b) Arrhenius plot of the dark current density under -50 mV applied bias
Fig. 4. The nBn photodetector: (a) specific detectivity spectrum at 150 K and -50 mV applied bias; (b) specific detectivity vs. 1000/T at 3.82 μm:the dotted line shows the BLIP detectivity for an ideal photodetector with 300 K background and 2π field of view
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Yi-Fan SHAN, Dong-Hai WU, Ruo-Yu XIE, Wen-Guang ZHOU, Fa-Ran CHANG, Nong LI, Guo-Wei WANG, Dong-Wei JIANG, Hong-Yue HAO, Ying-Qiang XU, Zhi-Chuan NIU. Mid-wavelength infrared nBn photodetectors based on InAs/InAsSb type-II superlattice with an AlAsSb/InAsSb superlattice barrier[J]. Journal of Infrared and Millimeter Waves, 2024, 43(4): 450
Category: Research Articles
Received: Oct. 18, 2023
Accepted: --
Published Online: Aug. 27, 2024
The Author Email: Dong-Hai WU (dhwu@semi.ac.cn), Zhi-Chuan NIU (zcniu@semi.ac.cn)