Chinese Optics Letters, Volume. 13, Issue Suppl., S21602(2015)
Photoluminescence of a high strain InGaAs single quantum well with GaAsP barriers
[3] X. Q. Wang, G. T. Du, J. Z. Yin, M. T. Li, H. Y. An. J. Optoelectron. Laser, 11, 212(2000).
[5] A. P. Liu, W. F. Han, M. Huang, Q. C. Luo. High Power Laser Part. Beams, 22, 1665(2010).
[7] H. Ma, X. J. Yi, J. Y. Jin, X. M. Yang, T. N. Li. Acta Photonica Sin., 31, 191(2002).
[10] S. J. Ma, Y. P. Wang, H. Sodabanlu, K. Watanabe, M. Sugiyama, Y. Nakano. J. Cryst. Growth, 352, 245(2012).
[14] W. Fan, X. X. Xu, X. F. Sun. J. Light Scattering, 20, 1820185(2008).
[15] J. Q. Pan, B. B. Huang, X. Y. Zhang, Z. X. Ren, X. Y. Qin, B. F. Zhu, X. L. Li. Chin. J. Quantum Electron., 20, 707(2003).
Get Citation
Copy Citation Text
Huibo Yuan, Lin Li, Te Li, Jing Zhang, Yong Wang, Zhongliang Qiao, Zhanguo Li, Yi Qu, Xiaohui Ma, Guojun Liu, "Photoluminescence of a high strain InGaAs single quantum well with GaAsP barriers," Chin. Opt. Lett. 13, S21602 (2015)
Category: Materials
Received: Jan. 11, 2015
Accepted: Mar. 10, 2015
Published Online: Aug. 8, 2018
The Author Email: Lin Li (licust@126.com)