Photoluminescence of a high strain InGaAs single quantum well with GaAsP barriers

Huibo Yuan; Lin Li; Te Li; Jing Zhang; Yong Wang; Zhongliang Qiao; Zhanguo Li; Yi Qu; Xiaohui Ma; Guojun Liu

doi:10.3788/COL201513.S21602

Chinese Optics Letters, Volume. 13, Issue Suppl., S21602(2015)

Photoluminescence of a high strain InGaAs single quantum well with GaAsP barriers

Huibo Yuan, Lin Li^*, Te Li, Jing Zhang, Yong Wang, Zhongliang Qiao, Zhanguo Li, Yi Qu, Xiaohui Ma, and Guojun Liu

National Key Lab of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China

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Figures & Tables(6)

Fig. 1. Summary energy band structure of InGaAs/GaAs structure. GaAs0.56P0.44 barriers are inserted to compared to the InGaAs/GaAs SQW with a bandgap of 1.953 eV.

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Fig. 2. Normalized PL spectrum of Samples T1 (dash), T2 (short dash), T3 (dash dot), T4 (dash dot), and T5 (solid) with different In/(In+Ga).

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Fig. 3. Relationship between measured wavelength (squares) and simulation wavelength (triangles) versus In/(In+Ga) of Samples T1–T4.

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Fig. 4. FWHM trend of Samples T1–T4 with In/(In+Ga) increasing from 24 to 36.

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Table 1. Material Growth Parameters

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Table 1. Material Growth Parameters

Material	Group III Sources	Group V Sources	Reactor Temperature (°C)	Growth Rate (μm/h)	V/III	Thickness (nm)	Reactor Pressure (mbar)
GaAs	Trimethyl Gallium (TMGa)	${AsH}_{3}$	650	1.4	43	300	100
InGaAs	Trimethyl Indium (TMIn), TMGa	${AsH}_{3}$	600	1.06	57	10	100
${GaAs}_{0.56} P_{0.44}$	TMGa	${AsH}_{3}$ , ${PH}_{3}$	730	0.8	80	30	100

Table 2. In/(In+Ga) of All Samples
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Table 2. In/(In+Ga) of All Samples
T1 T2 T3 T4 T5
$In / (In + Ga)$ 0.24 0.26 0.34 0.36 0.34
Simulation in Content 0.165 0.183 0.25 0.28 0.23

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Huibo Yuan, Lin Li, Te Li, Jing Zhang, Yong Wang, Zhongliang Qiao, Zhanguo Li, Yi Qu, Xiaohui Ma, Guojun Liu, "Photoluminescence of a high strain InGaAs single quantum well with GaAsP barriers," Chin. Opt. Lett. 13, S21602 (2015)

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