Fig. 1. Structure schematic of VCSEL

Fig. 2. Simulation results of active region gain and cavity mode changes under different temperatures

Fig. 3. Microscope image of VCSEL

Fig. 4. 894 nm oxide-confined VCSEL P-I-V characteristic curve, the inset is the microscopic image of the oxide aperture

Fig. 5. Spectral characteristics of the device under different current injection when the ambient temperature is 55 ℃

Fig. 6. Spectral characteristic curve of 894 nm oxidized VCSEL under different ambient temperatures and different current injection

Fig. 7. Optical and electrical characteristics of the device operating at 894.6 nm under different temperatures

Fig. 8. Far-field spot distribution of the device