Fig. 1. Structure of our fabricated 4H-SiC APDs. (a) Schematic cross-section of the 4H-SiC APDs; (b) profile of the beveled mesa, where the top-view image of one fabricated 4H-SiC APD with 600 μm diameter is shown in the inset.

Fig. 2. Dark current of fabricated large-area 4H-SiC APDs. (a) Comparison of dark current with and without passivation; (b) dark current of fabricated APDs with various sizes.

Fig. 3. I–V measurements of the fabricated 4H-SiC APD with 600 μm diameter, where the multiplication gain is calculated.

Fig. 4. Spectral response characteristics and external quantum efficiency of fabricated 4H-SiC APD with 600 μm diameter.

Fig. 5. Performance of the fabricated large-area 4H-SiC APD compared with the previously reported devices. (a) Comparison of multiplication gain; (b) comparison of dark current at the gain of 1000.