Stress Simulation Analysis of Multilayer Film Deposition

Fig. 5. Stress distribution of multilayer films at each deposition stage. (a) Oxidized SiO2 films; (b) BPSG deposition film; (c) titanium deposition film; (d) SiNx deposition film

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Table 1. Material parameters of Si

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Table 1. Material parameters of Si

Temperature /K	Coefficient ofthermal expansion /(10^-6 K^-1)	Youngmodulus /GPa	Poissonratio
300	2.616	129.99	0.28
400	3.253	79.14	0.30
500	3.614	37.05	0.31
600	3.842	19.70	0.32
700	4.016	11.91	0.32
800	4.151	7.90	0.32
900	4.185	5.60	0.32
1000	4.258	4.17	0.32
1100	4.323	3.22	0.32
1200	4.384	2.56	0.32
1300	4.442	2.08	0.32

Table 2. Material parameters of SiO2
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Table 2. Material parameters of SiO2
Temperature /K Coefficient ofthermal expansion /(10^-6 K^-1) Youngmodulus /GPa Poissonratio
293 0.4 71.8 0.16
373 0.62 71.4 0.157
473 0.75 70.8 0.155
573 0.7 70.5 0.154
673 0.65 70.2 0.153
773 0.6 70.1 0.153
873 0.5 70.05 0.152

Table 3. Material parameters of titanium, SiNx, and BPSG
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Table 3. Material parameters of titanium, SiNx, and BPSG
Material Coefficient ofthermal expansion /(10^-6 K^-1) Youngmodulus /GPa Poissonratio
Titanium 8.6 116 0.32
SiN_x 2.45 300 0.3
BPSG 3.43 65 0.3

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Chang'an Li, Mingdong Yang, Benqing Quan, Weilin Guan. Stress Simulation Analysis of Multilayer Film Deposition[J]. Laser & Optoelectronics Progress, 2018, 55(4): 043101

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