[1] [1] WAUK M T, WINSLOW D K. Vacuum deposition of AlN acoustic transducer ［J］. Applied Physics Letters, 1968, 13(8):286-288.

[2] [2] FEI C L, LIU X L, ZHU B P, et al. AlN piezoelectric thin films for energy harvesting and acoustic devices［J］. Nano Energy, 2018, 51:146-161.

[3] [3] WU H L, ZHANG K, HE C G, et al. Recent advances in fabricating wurtzite AlN film on (0001)-plane sapphire substrate［J］. Crystals, 2022, 12(1):38.

[4] [4] STECKEL A G, BRUUS H, MURALT P, et al. Fabrication, characterization, and simulation of glass devices with AlN thin-film transducers for excitation of ultrasound resonances［J］. Physical Review Applied, 2021, 16(1):014014.

[5] [5] BARANOVA L V，STRUNIN V I，BAYSOVA B T，et al. Phase composition and surface morphology of thin AlN films obtained trough magnetron sputtering［J］. High Energy Chemistry,2023,57（1）:7-10.

[6] [6] MADHURI A，JENA S，GUPTA M，et al. Nitrogen flow rate dependent atomic coordination, phonon vibration and surface analysis of DC magnetron sputtered nitrogen rich-AlN thin films［J］. Physica B-Condensed Mater, 2023, 666:415141.

[7] [7] PINGEN K，NEUHAUS S，WOLFF N，et al. Influence of Si(111) substrate off-cut on AlN film crystallinity grown by magnetron sputter epitaxy［J］, Journal of Applied Physics, 2023, 134（2）：025304.

[8] [8] LIN B H, CAI Y, WANG Y X, et al. Effects of growth temperature and reactor pressure on AlN thin film grown by metal-organic chemical vapor deposition［J］. Thin Solid Films, 2023, 783:140037.

[9] [9] SONG Y X, ZHANG H, LIN X Y, et al. Effect of flux rate on the growth of AlN films on sapphire by MNVPE［J］. Materials Science in Semiconductor Processing, 2023, 168：107843.

[11] [11] ZHANG Z Y，QIAN J，QIAN L R，et al. Finite element simulation of Rayleigh surface acoustic wave in(100) AlN/(100) ZnO/diamond layered structure［J］. Optoelectronics Letters,2023,19(12):732-738.

[14] [14] GAO J, HAO Z, YAN X E, et al. Surface acoustic wave devices fabricated on epitaxial AlN film［J］. Functional Materials Letters, 2016, 9(2):1650034.