Fig. 1. In and Ga compositions varying with diffusion length. (a) In composition; (b) Ga composition

Fig. 2. Plane diagram of relationship among band gap E_g, lattice constant a, composition x and composition y of Ga_xIn_1-xP_yAs_1-y at temperature of 300 K^[13]

Fig. 3. Epitaxial structure diagram of sample grown by MOCVD

Fig. 4. PL spectra of full epitaxial structure and primary epitaxial structure

Fig. 5. PL spectra at different annealing temperatures

Fig. 6. Peak values and FWHMs of PL spectra at different temperatures

Fig. 7. PL spectrum varying with annealing cycle

Fig. 8. Peak values and FWHMs of PL spectra at different annealing cycles