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Acta Optica Sinica, Volume. 41, Issue 5, 0516004(2021)

InGaAs Surface Cleaning Based on Scanning Focused XPS Technique

Minmin Rong1, Yijun Zhang1、*, Shiman Li1, Gangcheng Jiao2, Weixin Liu3, Ziheng Wang1, Zhaoxin Shu1, and Yunsheng Qian1
Author Affiliations
  • 1School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, China
  • 2Science and Technology on Low-Light-Level Night Vision Laboratory, Xi′an, Shaanxi 710065, China
  • 3No. 808 Institute, Shanghai Academy of Spacecraft Technology, Shanghai 201109, China
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    AbstractGet PDF(in Chinese)
    Figures&Tables (12)
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    References (22)
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    Figures & Tables(12)
    Surface SXI and optical microscope images for sample 1. (a) SXI image; (b) optical microscope image

    Fig. 1. Surface SXI and optical microscope images for sample 1. (a) SXI image; (b) optical microscope image

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    XPS spectra of elements in micro-areas 1-1 and 1-2. (a) Ga2p3; (b) As2p3; (c) In3d

    Fig. 2. XPS spectra of elements in micro-areas 1-1 and 1-2. (a) Ga2p3; (b) As2p3; (c) In3d

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    XPS fitted spectra of Ga2p3 for different samples. (a) Uncleaned sample; (b) sample 1; (c) sample 2; (d) sample 3

    Fig. 3. XPS fitted spectra of Ga2p3 for different samples. (a) Uncleaned sample; (b) sample 1; (c) sample 2; (d) sample 3

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    XPS fitted spectra of As2p3 for different samples. (a) Uncleaned sample; (b) sample 1; (c) sample 2; (d) sample 3

    Fig. 4. XPS fitted spectra of As2p3 for different samples. (a) Uncleaned sample; (b) sample 1; (c) sample 2; (d) sample 3

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    XPS fitted spectra of In3d for different samples. (a) Uncleaned sample; (b) sample 1; (c) sample 2; (d) sample 3

    Fig. 5. XPS fitted spectra of In3d for different samples. (a) Uncleaned sample; (b) sample 1; (c) sample 2; (d) sample 3

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    XPS spectra of C1s and O1s for different samples. (a) C1s; (b) O1s

    Fig. 6. XPS spectra of C1s and O1s for different samples. (a) C1s; (b) O1s

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    XPS spectra of C1s and O1s for different sample after different cleaning steps. (a) C1s; (b) O1s

    Fig. 7. XPS spectra of C1s and O1s for different sample after different cleaning steps. (a) C1s; (b) O1s

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    XPS fitted spectra of Ga2p3 for sample 4 after different cleaning steps. (a) Uncleaning; (b) UV-ozone cleaning; (c) degreasing cleaning; (d) etching based on HCl and IPA mixed solution

    Fig. 8. XPS fitted spectra of Ga2p3 for sample 4 after different cleaning steps. (a) Uncleaning; (b) UV-ozone cleaning; (c) degreasing cleaning; (d) etching based on HCl and IPA mixed solution

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    XPS fitted spectra of As2p3 for sample 4 after different cleaning steps. (a) Uncleaning; (b) UV-ozone cleaning; (c) degreasing cleaning; (d) etching based on HCl and IPA mixed solution

    Fig. 9. XPS fitted spectra of As2p3 for sample 4 after different cleaning steps. (a) Uncleaning; (b) UV-ozone cleaning; (c) degreasing cleaning; (d) etching based on HCl and IPA mixed solution

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    XPS fitted spectra of In3d for sample 4 after different cleaning steps. (a) Uncleaning; (b) UV-ozone cleaning; (c) degreasing cleaning; (d) etching based on HCl and IPA mixed solution

    Fig. 10. XPS fitted spectra of In3d for sample 4 after different cleaning steps. (a) Uncleaning; (b) UV-ozone cleaning; (c) degreasing cleaning; (d) etching based on HCl and IPA mixed solution

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    • Table 1. XPS fitted peak ratios of surface micro-area elements for different samplesunit: %

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      Table 1. XPS fitted peak ratios of surface micro-area elements for different samplesunit: %

      SampleC1sO1Ga-InAsGa2O3As-InGaAsAs2O3In-GaAsIn2O3
      Uncleaned sample33.0540.167.725.581.621.125.043.082.64
      Sample 128.3119.9918.692.1812.0210.580.706.061.47
      Sample 228.1221.2019.084.2413.115.900.875.731.75
      Sample 328.7710.3222.182.3415.5511.480.348.280.74

    • Table 2. XPS fitted peak ratios of surface micro-area elements for different samples after different cleaning stepsunit: %

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      Table 2. XPS fitted peak ratios of surface micro-area elements for different samples after different cleaning stepsunit: %

      SampleC1sO1sGa-InAsGa2O3As-InGaAsAs2O3As2O5In-GaAsIn2O3
      Uncleaned sample 433.0540.167.725.581.621.125.0403.082.64
      Sample 4 afterUV-ozone cleaning7.1062.942.2511.700.314.764.841.790.603.72
      Sample 4 afterdegreasing cleaning21.9349.584.8912.700.621.433.5001.034.34
      Sample 4 after solventetching by HCl and IPA15.918.7826.171.4121.0918.850.2807.200.31
      Sample 3 after solventetching by HCl and IPA28.7710.3222.182.3415.5511.480.3408.280.74
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    Minmin Rong, Yijun Zhang, Shiman Li, Gangcheng Jiao, Weixin Liu, Ziheng Wang, Zhaoxin Shu, Yunsheng Qian. InGaAs Surface Cleaning Based on Scanning Focused XPS Technique[J]. Acta Optica Sinica, 2021, 41(5): 0516004

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    Paper Information

    Category: Materials

    Received: Sep. 3, 2020

    Accepted: Nov. 2, 2020

    Published Online: Apr. 7, 2021

    The Author Email: Zhang Yijun (zhangyijun423@126.co)

    DOI:10.3788/AOS202141.0516004

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology