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Microelectronics, Volume. 52, Issue 1, 125(2022)

Study on RF Performance of SiC/GaN IMPATT Diode

DAI Yang1, YE Qingsong1, DANG Jiangtao1, LU Zhaoyang1, ZHANG Weiwei2, LEI Xiaoyi1, ZHANG Yunyao1, LIAO Chenguang1, ZHAO Shenglei3, and ZHAO Wu1
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  • 1[in Chinese]
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  • 3[in Chinese]
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    DAI Yang, YE Qingsong, DANG Jiangtao, LU Zhaoyang, ZHANG Weiwei, LEI Xiaoyi, ZHANG Yunyao, LIAO Chenguang, ZHAO Shenglei, ZHAO Wu. Study on RF Performance of SiC/GaN IMPATT Diode[J]. Microelectronics, 2022, 52(1): 125

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    Received: Jun. 25, 2021

    Accepted: --

    Published Online: Jun. 14, 2022

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.210238

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology