Acta Optica Sinica, Volume. 43, Issue 20, 2014002(2023)

Effect of In Mole Fraction in Upper Waveguide Layer on Performance of InGaN-Based Blue Lasers

Xingrui Fu and Shuping Li*
Author Affiliations
  • College of Physical Science and Technology, Xiamen University, Xiamen 361005, Fujian , China
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    Figures & Tables(13)
    Schematic diagram of InGaN-based LD standard structure and new structures
    Simulation and experimental L-I characteristic curves of standard structure
    Internal parameters of blue laser. (a) Three P-I curves with different front facet coating reflectivities; (b) curve of internal optical loss and carrier injection efficiency obtained by fitting mirror loss and slope efficiency
    Performance of standard structure. (a) Curves of photoelectric conversion efficiency and volt-ampere characteristic; (b) electron current density curve and logarithmic curve of electron concentration at 1 A current
    Standard structure changes with the In mole fraction of UWG layer. (a) Curves of optical power with In mole fraction under different injection currents; (b) curve of electron leakage rate and wave function coincidence rate with In mole fraction at 1 A current
    Curve of optical power with In mole fraction at 1 A current (change the start point of the gradient)
    Performance of the new structure and standard structure. (a) Photoelectric conversion efficiency and optical power curves; (b) comparison of stimulated recombination rate
    Energy band diagrams of three samples at 1 A current. (a) Conduction band; (b) valence band
    Electron current density curves of three samples at 1 A current
    Lasing spectra of three structures at 1 A current (each peak has been normalized)
    Optical field distributions and refractive index curves of three structures at 1 A current
    • Table 1. Doping concentration of InGaN-based LD standard structure

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      Table 1. Doping concentration of InGaN-based LD standard structure

      LayerDoping concentration /(1018 cm-3
      In0.04Ga0.96N P++10(Mg)
      In0.02Ga0.98N P5(Mg)
      40 periods SL1(Mg)
      Al0.2Ga0.8N EBL1(Mg)
      In0.02Ga0.98N UWG1(Mg)
      2 periods MQWs0
      In0.04Ga0.96N LWG2(Si)
      Al0.08Ga0.92N CL2(Si)
      GaN N10(Si)
      GaN Substrate2(Si)
    • Table 2. Material parameters for GaN, AlN, and InN

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      Table 2. Material parameters for GaN, AlN, and InN

      SampleInNGaNAlN
      Lattice constant /(10-10m)3.5483.1893.112
      Lattice mismatch /%110-2.4
      Refractive index3.41672.50672.0767
      Energy bandgap /eV0.6843.3586.032
      Bond strenth /eV1.932.202.88
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    Xingrui Fu, Shuping Li. Effect of In Mole Fraction in Upper Waveguide Layer on Performance of InGaN-Based Blue Lasers[J]. Acta Optica Sinica, 2023, 43(20): 2014002

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    Paper Information

    Category: Lasers and Laser Optics

    Received: Apr. 4, 2023

    Accepted: May. 24, 2023

    Published Online: Oct. 23, 2023

    The Author Email: Li Shuping (lsp@xmu.edu.cn)

    DOI:10.3788/AOS230773

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