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Chinese Optics Letters, Volume. 14, Issue 5, 051602(2016)

Investigation of low-temperature cathodoluminescence mechanism of Er-doped GaN thick films by ion implantation

Xiaodan Wang1、*, Yajuan Mo1, Xionghui Zeng2、**, Hongmin Mao1, Jianfeng Wang2,3, and Ke Xu2,3
Author Affiliations
  • 1Department of Physics, Suzhou University of Science and Technology, Suzhou 215009, China
  • 2Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • 3Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123, China
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    Normalized room temperature cathodoluminescence spectra of virgin GaN and 5×1015 Er/cm2-implanted GaN.

    Fig. 1. Normalized room temperature cathodoluminescence spectra of virgin GaN and 5×1015 Er/cm2-implanted GaN.

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    Normalized room temperature cathodoluminescence spectra of 1×1015 Er/cm2-implanted GaN before and after annealing at 1100°C.

    Fig. 2. Normalized room temperature cathodoluminescence spectra of 1×1015  Er/cm2-implanted GaN before and after annealing at 1100°C.

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    Normalized room temperature cathodoluminescence spectra of 1×1015 Er/cm2-implanted GaN after 1100°C annealing, at different accelerating voltages of the scanning electron microscope.

    Fig. 3. Normalized room temperature cathodoluminescence spectra of 1×1015  Er/cm2-implanted GaN after 1100°C annealing, at different accelerating voltages of the scanning electron microscope.

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    Room temperature cathodoluminescence spectra of Er-implanted GaN with different doses annealed at 1100°C. The accelerating voltage of the scanning electron microscope is 5 kV.

    Fig. 4. Room temperature cathodoluminescence spectra of Er-implanted GaN with different doses annealed at 1100°C. The accelerating voltage of the scanning electron microscope is 5 kV.

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    Cathodoluminescence spectra of 1×1015 Er/cm2-implanted GaN annealed at 1100°C. The temperature is from 82 to 323 K and the accelerating voltage of the scanning electron microscope is 5 kV.

    Fig. 5. Cathodoluminescence spectra of 1×1015 Er/cm2-implanted GaN annealed at 1100°C. The temperature is from 82 to 323 K and the accelerating voltage of the scanning electron microscope is 5 kV.

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    • Table 1. Position and FWHM of Cathodoluminescence Peaks of Virgin GaN and Er-Implanted GaN with Different Dosesa

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      Table 1. Position and FWHM of Cathodoluminescence Peaks of Virgin GaN and Er-Implanted GaN with Different Dosesa

      Implantation dose of Er (atom/cm2)Band-edge peak (nm)FWHM (nm)
      0(virgin)3628.5
      1×10133649.0
      1×10143659.3
      1×10153659.3
      5×1015365.69.8

    • Table 2. Position and FWHM of the Band-Edge Peaks of 1×1015 Er/cm2-Implanted GaN Before and After Annealinga

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      Table 2. Position and FWHM of the Band-Edge Peaks of 1×1015 Er/cm2-Implanted GaN Before and After Annealinga

      Annealing temperature (°C)Band-edge peak (nm)FWHM (nm)
      unannealing3659.3
      8003658.6
      9503658.6
      11003678.3
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    Xiaodan Wang, Yajuan Mo, Xionghui Zeng, Hongmin Mao, Jianfeng Wang, Ke Xu, "Investigation of low-temperature cathodoluminescence mechanism of Er-doped GaN thick films by ion implantation," Chin. Opt. Lett. 14, 051602 (2016)

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    Paper Information

    Category: Materials

    Received: Jan. 9, 2016

    Accepted: Mar. 4, 2016

    Published Online: Aug. 6, 2018

    The Author Email: Xiaodan Wang (xdwang0416@163.com), Xionghui Zeng (xhzeng2007@sinano.ac.cn)

    DOI:10.3788/COL201614.051602

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology