Investigation of low-temperature cathodoluminescence mechanism of Er-doped GaN thick films by ion implantation

Xiaodan Wang; Yajuan Mo; Xionghui Zeng; Hongmin Mao; Jianfeng Wang; Ke Xu

doi:10.3788/COL201614.051602

Chinese Optics Letters, Volume. 14, Issue 5, 051602(2016)

Investigation of low-temperature cathodoluminescence mechanism of Er-doped GaN thick films by ion implantation

Xiaodan Wang^1、*, Yajuan Mo¹, Xionghui Zeng^2、**, Hongmin Mao¹, Jianfeng Wang^2,3, and Ke Xu^2,3

Author Affiliations

¹Department of Physics, Suzhou University of Science and Technology, Suzhou 215009, China

²Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

³Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123, China

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Xiaodan Wang, Yajuan Mo, Xionghui Zeng, Hongmin Mao, Jianfeng Wang, Ke Xu, "Investigation of low-temperature cathodoluminescence mechanism of Er-doped GaN thick films by ion implantation," Chin. Opt. Lett. 14, 051602 (2016)

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Paper Information

Category: Materials

Received: Jan. 9, 2016

Accepted: Mar. 4, 2016

Published Online: Aug. 6, 2018

The Author Email: Xiaodan Wang (xdwang0416@163.com), Xionghui Zeng (xhzeng2007@sinano.ac.cn)

DOI:10.3788/COL201614.051602

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