[1] [1] J Benedikt, Thomas. Mid-IR Laser Application in Medicine［M］. Topics in Applied Physics, 2003: 530-565.

[2] [2] Y Rouillard, F Genty, A Perona, et al.. Edge and vertical surface emitting lasers around 2.0-2.5μm and their applications［J］. Philpsophical Transactions of the Royal Society of London Series A, 2001, 359(1780):581-596.

[3] [3] J Hodgkinson, B van Well, M Padgett, et al.. Modeling and interpretation of gas detection using remote laser pointers［J］. Spectrochimica Acta Part A, 2006, 63(5):929-939.

[4] [4] M Rattunde, J Schmitz, R Kiefer, et al.. Comprehensive analysis of the internal losses in 2.0 μm (AlGaIn)(AsSb) quantum-well diode lasers［J］. Appl Phys Lett, 2004, 84(23):4750-4752.

[5] [5] Zhang Y G, Zheng Y L, Lin C, et al.. Continuous wave performance and tunability of MBE grown 2.1μm InGaAsSb/AlGaAsSb MQW lasers［J］. Chin Phys Lett, 2006, 23(8):2262-2265.

[6] [6] Xing J L, Zhang Y, Liao Y P, et al.. Room-temperature operation of 2.4μm InGaAsSb/AlGaAsSb quantum-well laser diode with low-threshold current density［J］. Chin Phys Lett, 2014, 31(5):054204.

[7] [7] M T Kelemen, J Gilly, M Rattunade, et al.. Mid-infrared high-power diode lasers and modules［C］. SPIE, 2010, 7583:75830O.

[8] [8] R Liang, G Kipshidze, T Hosoda, et al.. 3.3-3.4μm diode lasers based on triple-layer GaInAsSb quantum wells［J］. IEEE, 2014, 26(7):664-666.

[9] [9] Y Zhang, G W Wang, B Tang, et al.. Molecular beam epitaxy growth of InGaSb/AlGaSb strained quantum well diode lasers［J］. Journal of Semiconductors, 2011, 32(10): 103002-4.

[10] [10] J L Xing, Y Zhang, Y Q Xu, et al.. High quality above 3μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy［J］. Chin Phys B, 2014, 23(1):017805.

[11] [11] J J Li, B F Cui, J Deng, et al.. 980nm high power semiconductor laser with asymmetric suoer large optical cavity［J］. Chinese J Lasers, 2013, 40(11):1102011.

[12] [12] del Amol J, Swirhum S, Swanson R M, et al.. Simultaneous measurement of hole lifetime, hole mobility and bandgap narrowing in heavily doped n-type silicon［J］. IEDM Tech Dig, 1985, 31: 290-293.

[13] [13] H T Peng, X Y Jia, S Z Zhang, et al.. Facet passivation of high power semiconductor lasers［J］. Micronanoelectronic Technology, 2009,46(10):591-594.