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Chinese Journal of Lasers, Volume. 42, Issue s1, 102006(2015)

GaSb-Based Quantum Wells 2 μm High Power Laser Diode

Liao Yongping1,2、*, Zhang Yu1,2, Xing Junliang1,2, Yang Chengao1,2, Wei Sihang1,2, Hao Hongyue1,2, Xu Yingqiang1,2, and Niu Zhichuan1,2
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    Liao Yongping, Zhang Yu, Xing Junliang, Yang Chengao, Wei Sihang, Hao Hongyue, Xu Yingqiang, Niu Zhichuan. GaSb-Based Quantum Wells 2 μm High Power Laser Diode[J]. Chinese Journal of Lasers, 2015, 42(s1): 102006

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    Paper Information

    Category: Laser physics

    Received: Jan. 20, 2015

    Accepted: --

    Published Online: Sep. 14, 2015

    The Author Email: Yongping Liao (liaoyp981@semi.ac.cn)

    DOI:10.3788/cjl201542.s102006

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology